相关论文: Interplay between strain and size quantization in …

We revisit the problem of surface states in semiconductors with inverted band structures, such as $\alpha$-Sn and HgTe. We unravel the confusion that arose over the past decade regarding the origin of the surface states, their topological…

The opening of a band gap due to compressive uniaxial strain renders bulk HgTe a strong three-dimensional topological insulators with protected gapless surface states at any surface. By employing a six-band k.p model, we determine the spin…

We study the topologically non-trivial semi-metals by means of the 6-band Kane model. Existence of surface states is explicitly demonstrated by calculating the LDOS on the material surface. In the strain free condition, surface states are…

Topological insulators are bulk semiconductors that manifest in-gap massless Dirac surface states due to the topological bulk-boundary correspondence principle [1-3]. These surface states have been a subject of tremendous ongoing interest,…

This work explores the topological phase diagram of inverted-band-gap semiconductors under strain and spin-orbit coupling. Using a minimalistic Luttinger Hamiltonian model, we follow the transitions between a 3D topological insulator, a…

We report on microscopic tight-binding modeling of surface states in Bi$_2$Se$_3$ three-dimensional topological insulator, based on a sp$^3$ Slater-Koster Hamiltonian, with parameters calculated from density functional theory. The effect of…

We report transport studies on a three dimensional, 70 nm thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semi-metallic HgTe, which thus becomes a three dimensional…

We study how the surface states in the strong topological insulator Bi$_2$Se$_3$ are influenced by finite size effects, and compare our results with those recently obtained for 2D topological insulator HgTe. We demonstrate two important…

For the IV-VI semiconductor family we derive an exact relation between the microscopic gap edge wave functions of the bulk insulator and the Dirac-Weyl topological surface state wave function, thus obtaining a fully microscopic surface…

Rock-salt chalcogenide SnTe represents the simplest realization of a topological insulator where a crystal symmetry allows for the appearence of topologically protected metallic states with an even number of Dirac cones on high-symmetry…

We have investigated spin reorientation phenomena and interaction driven effects under the presence of applied strains on the (001) surface of Pb$_{1-x}$Sn$_x$(Te, Se) topological crystalline insulators, which host multiple Dirac cones. Our…

Topological insulators are characterized by spin-momentum-locked massless surface states which are robust under various perturbations. Manipulating such surface states is a topic of vigorous research, as a possible route for the realization…

Topological crystalline insulators (TCI) are new topological phases of matter protected by crystal symmetry of solids. Recently, the first realization of TCI has been predicted and observed in IV-VI semiconductor SnTe and related alloys…

We apply both analytical and ab-initio methods to explore heterostructures composed of a threedimensional topological insulator (3D TI) and an ultrathin normal insulator (NI) overlayer as a proof ground for the principles of the topological…

We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a…

Spin-orbit interaction affects the band structure of topological insulators beyond the opening of an inverted gap in the bulk bands, and the understanding of its effects on the surface states is of primary importance to access the…

One-dimensional topological edge modes are usually studied considering the interface between two different semi infinite periodic crystals (PCs) with inverted band structure around the Dirac point. Here we consider the case where the two…

Topological surface states of Bi-doped PbSb2Te4 [Pb(Bi0.20Sb0.80)2Te4] are investigated through analyses of quasiparticle interference (QPI) patterns observed by scanning tunneling microscopy. Interpretation of the experimental QPI patterns…

We have investigated the band structure of the bulk crystal and the (001) surface of the \beta-InTe layered crystal subjected to biaxial stretching in the layer plane. The calculation has been carried out using the full-potential linearized…

Orbital degrees of freedom can have pronounced effects on the fundamental properties of electrons in solids. In addition to influencing bandwidths, gaps, correlation strength and dispersion, orbital effects have also been implicated in…