相关论文: Fast Silicon Carbide MOSFET based high-voltage pus…
Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and fast switching speeds. Its wide band gap makes it an…
In this work, we propose a new Stepped Oxide Hetero-Material Trench (SOHMT) power MOSFET with three sections in the trench gate (an N+ poly gate sandwiched between two P+ poly gates) and having different gate oxide thicknesses (increasing…
Group IV vacancy color centers in diamond are promising spin-photon interfaces with strong potential for applications for photonic quantum technologies. Reliable methods for controlling and stabilizing their charge state are urgently needed…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…
Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scalable quantum communication technologies compatible with…
We present a theoretical scheme for a family of fast and high-fidelity two-qubit iSWAP gates between neutral atoms separated by more than 20 um, enabled by resonant dipole-dipole spin-exchange interactions between Rydberg states. The…
We present a theoretical study of fast all-to-all entangling gates in trapped-ion quantum processors, based on impulsive excitation of spin-dependent motion with broadband laser pulses. Previous studies have shown that such fast gate…
We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control…
Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of them with distinct optical and spin properties. Application to…
A scheme for excitation and individual addressing using Rydberg states of trapped Barium ions is presented for the purpose of fast gates and entanglement. Dipole matrix elements, dynamic polarizabilities, and one- and two-photon transition…
Superconducting circuits are promising candidates for future computational architectures, however, practical applications require fast operation. Here, we demonstrate fast, gate-based switching of an Al nanowire-based superconducting switch…
The quantum charge-coupled device (QCCD) is one of the notable architectures to achieve large-scale trapped-ion quantum computers. To realize QCCD architecture, ions must be transported quickly while minimizing motional excitation.…
Presented is a study of the charge-state evolution of relativistic lead ions passing through a thin aluminum stripper foil. It was motivated by the Gamma Factory project at CERN, where optical laser pulses will be converted into intense…
Beam diagnostics is important to guarantee good quality of beam in particle accelerator. Both the electron and positron run in the tunnel in some modern electron positron colliders such as Circular Electron Positron Collider (CEPC) to be…
Charge is transported through superconducting SSS single-electron transistors at finite bias voltages by a combination of coherent Cooper-pair tunneling and quasiparticle tunneling. At low transport voltages the effect of an ``odd''…
We demonstrate power-efficient, thermo-optic, silicon nitride waveguide phase shifters for blue, green, and yellow wavelengths. The phase shifters operated with low power consumption due to a suspended structure and multi-pass waveguide…
We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field…
Energy efficiency of optoelectronic switches based on high-voltage silicon photodiodes, phototransistors or photothyristors and triggered-on by picosecond laser pulses has been studied for the first time. For given values of resistive load,…
Two-dimensional transition metal dichalcogenides (TMD) offer a unique platform for creating van-der-Waals heterojunctions with fascinating physical properties and promising applications in optoelectronics and valleytronics. Because of their…
A beta-ray detecting nuclear quadrupole resonance system has been developed at NSCL/MSU to measure ground-state electric quadrupole moments of short-lived nuclei produced as fast rare isotope beams. This system enables quick and sequential…