相关论文: Fast Silicon Carbide MOSFET based high-voltage pus…
In this paper, we presented a matrix converter with a high-frequency DC link for EV DC fast charging applications. Introducing this topology allows eliminating electrolytic capacitors in DC link of the converter, which potentially increases…
Charge transport in semiconducting single-walled nanotubes (SWNTs) with Schottky-barrier contacts has been studied at high bias. We observe nearly symmetric ambipolar transport with electron and hole currents significantly exceeding 25…
We implement faster-than-adiabatic two-qubit phase gates using smooth state-dependent forces. The forces are designed to leave no final motional excitation, independently of the initial motional state in the harmonic, small-oscillations…
The solid-state electrolyte is critical for achieving next-generation high energy density and high-safety batteries. Solid polymer electrolytes (SPEs) possess great potential for commercial application owing to their compatibility with the…
Superconductor-based light-emitting diode (superconductor-based LED) in strong light-confinement regime are characterized as a superconductor-based three-terminal device, and its transport properties are quantitatively investigated. In the…
We studied charge transport phenomena through a core substituted naphthalenediimide (NDI) single-molecule junctions using the electrochemical STM-based break junction technique in combination with DFT calculations. The conductance switch…
Combined diverse two-dimensional (2D) materials for semiconductor interfaces are attractive for electrically controllable carrier confinement to enable excellent electrostatic control. We investigated the transport characteristic in…
Dynamical decoupling techniques are a versatile tool for engineering quantum states with tailored properties. In trapped ions, nested layers of continuous dynamical decoupling by means of radio-frequency field dressing can cancel dominant…
We propose a time-multiplexed DS-DBR/SOA-gated system to deliver low-power fast tuning across S-/C-/L-bands. Sub-ns switching is demonstrated, supporting 122$\times$50 GHz channels over 6.05 THz using AI techniques.
We report fast charge state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a…
We present a fast phase gate scheme that is experimentally achievable and has an operation time more than two orders of magnitude faster than current experimental schemes for low numbers of pulses. The gate time improves with the number of…
We present an alternative scheme for the generation of a 2-qubit quantum gate interaction between laser-cooled trapped ions. The scheme is based on the AC Stark shift (lightshift) induced by laser light resonant with the ionic transition…
A robust and portable power supply has been developed specifically for charging linear transformer drivers, a modern incarnation of fast pulsed power generators. It is capable of generator +100 kV and -100 kV at 1 mA, while withstanding the…
When plasmonic nanoparticles are coupled with semiconductors, highly energetic hot carriers can be extracted from the metal-semiconductor interface for various applications in light energy conversion. Hot charge-carrier extraction upon…
Electrically driven single-photon sources are essential for building compact, scalable and energy-efficient quantum information devices. Recently, color centers in SiC emerged as promising candidates for such nonclassical light sources.…
Batteries are connected in series to meet the voltage requirement in many applications. A voltage equalizer circuit is necessary to ensure that none of the batteries is over-charged or over-discharged. A novel fast soft-switched…
We propose several schemes for implementing a fast two-qubit quantum gate for neutral atoms with the gate operation time much faster than the time scales associated with the external motion of the atoms in the trapping potential. In our…
This paper discusses free carrier generation by pulsed laser fields as a mechanism to switch the optical properties of semiconductor photonic crystals and bulk semiconductors on an ultrafast time scale. Requirements are set for the…
The excitation of the 8 eV $^{229m}$Th isomer through the electronic bridge mechanism in highly charged ions is investigated theoretically. By exploiting the rich level scheme of open $4f$ orbitals and the robustness of highly charged ions…
Surface plasmon polaritons can substantially reduce the sizes of optical devices, since they can concentrate light to (sub)wavelength scales. However, (sub)wavelength-scale electro-optic plasmonic switches or modulators with high…