相关论文: Fast Silicon Carbide MOSFET based high-voltage pus…
Electronic stopping cross sections (SCS) of nickel, silicon and nickel-silicon alloys for protons and helium (He) ions are studied in the regime of medium and low energy ion scattering, i.e., for ion energies in the range from 500 eV to 200…
Compared with silicon (Si) power devices, Silicon carbide (SiC) devices have the advantages of fast switching speed and low on-resistance. However, the effects of non-ideal characteristics of SiC MOSFETs and stray parameters (especially…
Hybrid quantum dot (QD) / transition metal dichalcogenide (TMD) heterostructures are attractive components of next generation optoelectronic devices, which take advantage of the spectral tunability of QDs and the charge and exciton…
We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with…
We propose a novel class of atomic clocks based on highly charged ions. We consider highly-forbidden laser-accessible transitions within the $4f^{12}$ ground-state configurations of highly charged ions. Our evaluation of systematic effects…
Programmable integrated photonics aims to replicate the versatility of field-programmable gate arrays in the optical domain. However, scaling these systems has been prevented by the high power consumption and thermal crosstalk of…
Networks inside current data centers comprise a hierarchy of power-hungry electronic packet switches interconnected via optical fibers and transceivers. As the scaling of such electrically-switched networks approaches a plateau, a…
High-performance photonic switches are essential for large-scale optical routing for AI large models and Internet of things. Realizing nonvolatility can further reduce power consumption and expand application scenarios. We propose a…
We excite the 717 nm electric quadrupole 6$D_{3/2} $ $\leftrightarrow$ 7$S_{1/2}$ transition in a laser-cooled $^{232}$Th$^{3+}$ ion crystal. The transition frequency and the lifetime of the metastable 7$S_{1/2}$ level are measured to be…
We describe five high-voltage (60 to 550V peak to peak), high-speed (1-300ns rise time; 1.3-300MHz bandwidth) linear amplifiers for driving capacitive or resistive loads such as electro-optic modulators. The amplifiers use bipolar…
We have investigated electrical transport in a diffusive multiwalled carbon nanotube contacted using superconducting leads made of Al/Ti sandwich structure. We find proximity-induced superconductivity with measured critical currents up to…
Here, we propose a Charge Plasma (CP)-based Germanium Double Gate Tunnel Field-Effect Transistor (Ge-DGTFET) device structure, where a CP is induced in the heavily doped source region using the work function engineering of source electrode.…
Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allows more than one DQD to be coupled to the same microwave…
We propose a scheme for controlling interactions between Rydberg-excited neutral atoms in order to perform a fast high-fidelity quantum gate. Unlike dipole-blockade mechanisms already found in the literature, we drive resonantly the atoms…
We propose fast phase-gates of single nuclear spins interacting with single electron spins. The gate operation utilizes geometric phase shifts of the electron spin induced by fast/slow rotating fields; the path difference depending on…
We propose a theoretical scheme for realizing {\deg}exible two-qubit controlled phase gate. A transmission line resonator is used to induce the coupling between nitrogen-vacancy (N-V) in diamond and superconducting qubit. The N-V center…
Narrow gaps are formed in suspended single to few layer graphene devices using a pulsed electrical breakdown technique. The conductance of the resulting devices can be programmed by the application of voltage pulses, with a voltage of…
We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation…
Moire superlattices of transition metal dichalcogenide (TMD) bilayers have been shown to host correlated electronic states, which arises from the interplay of emergent moire potential and long-range Coulomb interactions. Here we…
We present an experimental study of hybrid turnstiles with high charging energies in comparison to the superconducting gap. The device is modeled with the sequential tunneling approximation. The backtunneling effect is shown to limit the…