相关论文: Fast Silicon Carbide MOSFET based high-voltage pus…

Hybrid heterostructure based phototransistors are attractive owing to their high gain induced by photogating effect. However, the absence of an in-plane built-in electric field in the single channel layer transistor results in a relatively…

We have investigated the microwave response of nanotube Josephson junctions at 600-900 MHz at microwave powers corresponding to currents from 0 to $2\times I_{\mathrm C}$ in the junction. Compared with theoretical modeling, the response of…

This work demonstrates a fast thermo-optic switching mechanism on silicon nitride on insulator platform leveraging parity-time symmetry breaking. The cladding-free design enables low-loss optical propagation in a partially metal-covered…

This work presents a new silicon vertical JFET (V-JFET) device, based on the trenched 3D-detector technology developed at IMB-CNM, to be used as switches for the High-Voltage powering scheme of the ATLAS upgrade Inner Tracker. The…

We study the model of a molecular switch comprised of a molecule with a soft vibrational degree of freedom coupled to metallic leads. In the presence of strong electron-ion interaction, different charge states of the molecule correspond to…

Transition metal dichalcogenides like MoS2 can exist many phases like the semiconducting 2H and the metallic 1T phases which have shown intriguing properties for energy and electrocatalytic applications. However, the 2H and 1T phases…

The electronic structure of the three-particle donor bound exciton (D$^0$X) in silicon is computed using a large-scale atomic orbital tight-binding method within the Hartree approximation. The calculations yield a transition energy close to…

We examine spin-dependent displacement of a single electron, resulting in separation and relocation of the electron wavefunction components, and thus charge parts, corresponding to opposite spins. This separation is induced by a pulse of an…

GTO-like thyristors 5STH-2045H0002 (4.5 kV, 18 kA/us) developed by ABB semiconductors are currently used at CERN in LHC Beam Dumping System (LBDS): high-power switches with high dI/dt capability and low turn-on delay time are required.…

We demonstrate that ultrafast carrier excitation can drastically affect electronic structures and induce brief surface plasmonic response in non-plasmonic metals, potentially creating a plasmonic switch. Using first-principles molecular…

High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped…

Optical frequency metrology in atoms and ions can probe hypothetical fifth-forces between electrons and neutrons by sensing minute perturbations of the electronic wave function induced by them. A generalized King plot has been proposed to…

In semiconductor-based quantum technologies, the capability to shuttle charges between components is profoundly enabling. We numerically simulated various "conveyor-belt" shuttling scenarios for simple Si/SiO2 devices, explicitly modelling…

We demonstrate an ultrafast voltage sampling technique using a stream of electron wavepackets. Electrons are emitted from a single-electron pump and travel through electron waveguides towards a detector potential barrier. Our electrons…

Medium voltage direct-current based integrated power system is projected as one of the solutions for powering the all-electric ship. It faces significant challenges for accurately energizing advanced loads, especially the pulsed power load,…

Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns with a scalable number of signal lines. To realize their full…

We describe a robust technique for the fabrication of high performance vertically scaled n-doped field-effect transistors from large band gap carbon nanotubes. These devices have a tunable threshold voltage in the technologically relevant…

A study of charge drift in a large scale optically transparent solid xenon is reported. A pulsed high power xenon light source is used to liberate electrons from a photocathode. The drift speeds of the electrons are measured using a 8.7\,cm…

Ferroelectric field-effect transistors integrated on 2D semiconducting platforms are extremely relevant for low power electronics. Here, we propose and demonstrate a novel phase-change ferroelectric field effect transistor (PCFE-FET) for…

Gatemon qubits are based on a superconductor-quantum dot-superconductor (S-QD-S) junction which enables in situ electrostatic tuning via a gate electrode. For a single-channel QD this structure gives rise to two subgap Andreev bound states…