相关论文: Fast Silicon Carbide MOSFET based high-voltage pus…

We demonstrate an electrically controlled high-spin (S=5/2) to low-spin (S=1/2) transition in a three-terminal device incorporating a single Mn2+ ion coordinated by two terpyridine ligands. By adjusting the gate-voltage we reduce the…

Spin defects in silicon carbide have exceptional electron spin coherence with a near-infrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we successfully integrate highly…

We present a scheme to realize two-direction optical switch by a single-mode optical cavity containing some four-level atoms. The high switching efficiency can be obtained through low photon loss and large third-order nonlinear…

Time-division multiplexing of cryogenic signals is a promising approach to reduce space requirements, shorten cooldown times, and increase the number of quantum devices measured per cooldown. We demonstrate time-division multiplexing of…

The cold source field-effect transistor (CSFET) is promising for reducing power dissipation in integrated circuits by engineering the density of states at the injecting source. Existing CSFET designs utilizing Dirac-source metals or…

In silicon electro-optic (EO) Mach-Zehnder interferometer (MZI) switches, crosstalk is typically limited by beam imbalance between the MZI arms, primarily caused by the free carrier absorption loss during routing, thus hindering switch…

Electro-optic modulators within Mach--Zehnder interferometers are a common construction for optical switches in integrated photonics. A challenge faced when operating at high switching speeds is that noise from the electronic drive signals…

We investigated both theoretically and experimentally dynamic features of a phase-biased charge qubit consisting of a single-Cooper-pair transistor closed by a superconducting loop. The effective inductance of the qubit was probed by a…

Experimental charge exchange and energy loss data for the transmission of slow highly charged Xe ions through ultra-thin polymeric carbon membranes are presented. Surprisingly, two distinct exit charge state distributions accompanied by…

In this paper we study robust pulse design for electron shuttling in solid state devices. This is crucial for many practical applications of coherent quantum mechanical systems. Our objective is to design control pulses that can transport…

Artificial-intelligence (AI) workloads are driving rapid growth in data-center electricity use and rack power density, increasing demand for power-delivery systems that are efficient and robust to fast load transients. Conventional…

Applications for noisy intermediate-scale quantum computing devices rely on the efficient entanglement of many qubits to reach a potential quantum advantage. Although entanglement is typically generated using two-qubit gates, direct control…

Controlling the energy spectrum of quantum-coherent superconducting circuits, i.e. the energies of excited states, the circuit anharmonicity and the states' charge dispersion, is essential for designing performant qubits. This control is…

The escalating need for expansive data bandwidth, and the resulting capacity constraints of the single mode fiber (SMF) have positioned the 2-${\mu}$m waveband as a prospective window for emerging applications in optical communication. This…

Composite materials achieved by including transition-metal oxides with different structures and morphologies in sulfur are suggested as scalable cathodes for high-energy lithium-sulfur (Li-S) batteries. The composites contain 80 wt.% sulfur…

We propose a novel scheme for probing vibronic coherence in charge migration in molecules utilizing strong field sequential double ionization. To demonstrate the feasibility of this approach, we perform full simulations of a pump-probe…

State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However,…

All laser-driven entangling operations for trapped-ion qubits have hitherto been performed without control of the optical phase of the light field, which precludes independent tuning of the carrier and motional coupling. By placing…

We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart,…

This paper presents a low-loss optically-controlled inline RF switch suitable for L- and S-band applications. Under 1.5 W laser power, the switch exhibits a measured ON-state insertion loss of less than 0.33 dB and return loss better than…