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相关论文: Dispersive Drumhead States in Nodal-Line Semimetal…

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Flat bands in graphitic materials emerged as a platform for realizing tunable correlated physics. As a nodal-line semimetal, rhombohedral graphite features flat drumhead surface states in the vicinity of the Dirac points, which carry a…

介观与纳米尺度物理 · 物理学 2025-12-24 Xiaoqian Liu , Yifei Guan , Oleg V. Yazyev

The search for topological insulators has been actively promoted in the field of condensed matter physics for further development in energy-efficient information transmission and processing. In this context, recent studies have revealed…

Triple-fold or pseudospin-1 semimetals belong to a class of multi-fold materials in which linearly dispersive bands and flat bands intersect at the same point, forming triple-fold crossing points. We conduct an analytical investigation of…

介观与纳米尺度物理 · 物理学 2025-10-07 A. Yu. Prykhodko , E. V. Gorbar , P. O. Sukhachov

The abstract notion of topology has led to profound insights into real materials. Notably, the surface and edges of topological materials can host physics, such as unidirectional charge or spin transport, that is unavailable in isolated…

介观与纳米尺度物理 · 物理学 2021-07-02 Nicodemos Varnava , Justin H. Wilson , J. H. Pixley , David Vanderbilt

We study the electronic and transport properties of a network of domain walls between insulating domains with opposite valley Chern numbers. We find that the network is semi-metallic with Dirac dispersion near the charge neutrality point…

介观与纳米尺度物理 · 物理学 2020-05-20 Tao Hou , Yafei Ren , Yujie Quan , Jeil Jung , Wei Ren , Zhenhua Qiao

In a three-dimensional strong topological insulator, gapless helical surface states appear everywhere on its surface. In the presence of a screw dislocation, gapless helical modes also appear in the vicinity of the corresponding dislocation…

介观与纳米尺度物理 · 物理学 2024-05-28 Tatsuro Sakaguchi , Yositake Takane

We study electron transport at the edge of a generic disordered two-dimensional topological insulator, where some channels are topologically protected from backscattering. Assuming the total number of channels is large, we consider the edge…

介观与纳米尺度物理 · 物理学 2016-03-08 E. Khalaf , M. A. Skvortsov , P. M. Ostrovsky

It has been realized over the past two decades that topological nontriviality can be present not only in insulators but also in gapless semimetals, the most prominent example being Weyl semimetals in three dimensions. Key to topological…

介观与纳米尺度物理 · 物理学 2024-01-09 Faruk Abdulla , Ganpathy Murthy , Ankur Das

We theoretically investigate a two-dimensional heterostructure composed of a topological insulator (TI) and a Mott insulator (MI), and clarify what kind of electronic states can be realized at the interface. By using inhomogeneous dynamical…

强关联电子 · 物理学 2013-09-13 Suguru Ueda , Norio Kawakami , Manfred Sigrist

The topological properties of the one-dimensional interacting systems with spatially modulated interaction in two-particle regime are theoretically investigated. Taking the boson-Hubbard model and spinless fermion interacting model as…

强关联电子 · 物理学 2025-02-11 Zheng-Wei Zuo , Wanwan Shi , Haisheng Li

We study the properties of the surface states in three-dimensional topological insulators in the presence of a ferromagnetic exchange field. We demonstrate that for layered materials like Bi$_2$Se$_3$ the surface states on the top surface…

介观与纳米尺度物理 · 物理学 2014-03-21 Tomi Paananen , Henning Gerber , Matthias Götte , Thomas Dahm

Following the intense studies on topological insulators, significant efforts have recently been devoted to the search for gapless topological systems. These materials not only broaden the topological classification of matter but also…

Motivated by the abundance of symmetry breaking states in magic-angle twisted bilayer graphene and other two-dimensional materials, we study superconducting (SC) and charge orders in two-dimensional topological flat bands in the strong…

强关联电子 · 物理学 2024-09-16 Penghao Zhu , Shi Feng , Yuan-Ming Lu

Two-dimensional (2D) topological electronic insulators are known to give rise to gapless edge modes, which underlie low energy dynamics, including electrical and thermal transport. This has been thoroughly investigated in the context of…

介观与纳米尺度物理 · 物理学 2022-05-10 Udit Khanna , Yuval Gefen , Ora Entin-Wohlman , Amnon Aharony

We study the influence of the antiferromagnetic order on the surface states of topological insulators. We derive an effective Hamiltonian for these states, taking into account the spatial structure of the antiferromagnetic order. We obtain…

介观与纳米尺度物理 · 物理学 2024-05-14 R. S. Akzyanov , A. L. Rakhmanov

We develop a theory for the compressibility of the surface states of 3D topological insulators and propose that surface probes of the compressibility via scanning single electron transistor microscopy will be a straightforward way to access…

介观与纳米尺度物理 · 物理学 2013-02-06 D. S. L. Abergel , S. Das Sarma

Topological semimetals are gapless states of matter which have robust and unique electromagnetic responses and surface states. In this paper, we consider semimetals which have point like Fermi surfaces in various spatial dimensions…

介观与纳米尺度物理 · 物理学 2015-08-12 Srinidhi T. Ramamurthy , Taylor L. Hughes

Edge states in topological insulators (TIs) disperse symmetrically about one of the time-reversal invariant momenta $\Lambda$ in the Brillouin zone (BZ) with protected degeneracies at $\Lambda$. Commonly TIs are distinguished from trivial…

介观与纳米尺度物理 · 物理学 2017-07-05 H. Deshpande , R. Winkler

Volkov-Pankratov states are nontopological massive bound states which generally arise across the smooth interface between two adjacent regions of a two-band semimetal, over which a gap parameter changes sign smoothly. In this work, we show…

介观与纳米尺度物理 · 物理学 2024-11-15 Aiman Rauf , SK Firoz Islam

Localized interface states in abrupt semiconductor heterojunctions are studied within a tight-binding model. The intention is to provide a microscopic foundation for the results of similar studies which were based upon the two-band model…

材料科学 · 物理学 2009-11-07 A. V. Kolesnikov , R. Lipperheide , U. Wille