相关论文: Electrostatic tuning of bilayer graphene edge mode…

A new, weakly damped, {\em transverse} electromagnetic mode is predicted in graphene. The mode frequency $\omega$ lies in the window $1.667<\hbar\omega/\mu<2$, where $\mu$ is the chemical potential, and can be tuned from radiowaves to the…

The transport properties of a twisted bilayer graphene barrier are investigated for various twist angles. Remarkably, for small twist angles around the magic angle $\theta_m \sim 1.05^{\circ}$, the local currents around the AA-stacked…

We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…

We study the electronic transmission through a graphene bilayer in the presence of an applied bias between layers. We consider different geometries involving interfaces between both a monolayer and a bilayer and between two bilayers. The…

We study charge fractionalization in bilayer graphene which is intimately related to its zero modes. In the unbiased case, the valley zero modes occur in pairs rendering it unsuitable for charge fractionalization. A bias plays the role of a…

Bilayer graphene with an interlayer potential difference has an energy gap and, when the potential difference varies spatially, topologically protected one-dimensional states localized along the difference's zero-lines. When disorder is…

Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature. The strain and curvature strongly affect the local band structures of the twisted graphene bilayer; the…

By taking into account the full four band energy spectrum, we calculate the transmission probability and conductance of electrons across symmetric and asymmetric double potential barrier with a confined interlayer potential difference in…

Generating photogalvanic effects in centrosymmetric materials can provide new opportunities for developing passive photodetectors and energy harvesting devices. In this work, we investigate the photogalvanic effects in centrosymmetric…

Electronic states at domain walls in bilayer graphene are studied by analyzing their four and two band continuum models, by performing numerical calculations on the lattice, and by using quantum geometric arguments. The continuum theories…

At near-parallel orientation, twisted bilayer of transition metal dichalcogenides exhibit inter-layer charge transfer-driven out-of-plane ferroelectricity that may lead to unique electronic device architectures. Here we report detailed…

In the presence of a circularly polarized mid-infrared radiation graphene develops dynamical band gaps in its quasi-energy band structure and becomes a Floquet insulator. Here we analyze how topologically protected edge states arise inside…

We employ a dual-gated geometry to control the band gap \Delta in bilayer graphene and study the temperature dependence of the resistance at the charge neutrality point, RNP(T), from 220 to 1.5 K. Above 5 K, RNP(T) is dominated by two…

Recent measurements have shown that a continuously tunable bandgap of up to 250 meV can be generated in biased bilayer graphene [Y. Zhang et al., Nature 459, 820 (2009)], opening up pathway for possible graphene-based nanoelectronic and…

We study ballistic transport in bilayer graphene junctions and show how electrostatic gating, interlayer bias, and homogeneous strain provide complementary control over electron transmission. In the absence of strain, transport is governed…

Electron fully spin-polarized edge states in graphene emerged at the interfaces of a nonuniform magnetic field are studied numerically in a tight-binding model, with both the orbital and Zeeman-splitting effects of magnetic field…

We study analytically the plasmonic modes in the graphene-coated dielectric nanowire, based on the explicit form of nonlinear surface conductivity of graphene. The propagation constants of different plasmonic modes can be tuned by the input…

Spatially inhomogeneous strains in graphene can simulate the effects of valley-dependent magnetic fields. As demonstrated in recent experiments, the realizable magnetic fields are large enough to give rise to well-defined flat pseudo-Landau…

Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability.…

We investigate gated trilayer graphene partially devoid of outer layers and forming a system of two trilayers connected by a single layer of graphene. A difference in the stacking order of trilayers leads to the appearance of gapless…