相关论文: Electrostatic tuning of bilayer graphene edge mode…

Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical transport characteristics of graphene channel. We explore…

Bilayer graphene twisted by a small angle shows a significant charge modulation away from neutrality, as the charge in the narrow bands near the Dirac point is mostly localized in the regions of the Moir\'e pattern with $AA$ stacking. The…

The edges of graphene-based systems possess unusual electronic properties, originating from the non-trivial topological structure associated to the pseudo-spinorial character of the electron wave-functions. These properties, which have no…

The edge states of the quantum Hall and fractional quantum Hall effect of a two-dimensional electron gas provide key access to the excitations of the bulk. Here we demonstrate controlled transmission of edge states in bilayer graphene.…

The topological properties of gapped graphene have been explored for valleytronics applications. Prior transport experiments indicated their topological nature through large nonlocal resistance in Hall-bar devices, but the origin of this…

In this work we show that the trigonal warping of the electronic bands in bilayer graphene dramatically modifies the behavior of the one-dimensional modes topologically confined due to an inhomogeneous bias that changes sign across a…

We theoretically investigate a folded bilayer graphene structure as an experimentally realizable platform to produce the one-dimensional topological zero-line modes. We demonstrate that the folded bilayer graphene under an external gate…

We investigate electronic transport in gapped bilayer graphene (gBLG) devices. For certain edge terminations -typically a combination of zigzag, armchair, and bearded types - we observe edge state conduction within the band gap, which is…

We study the problem of impurities and mid-gap states in a biased graphene bilayer. We show that the properties of the bound states, such as localization lengths and binding energies, can be controlled externally by an electric field…

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…

We show that gated bilayer graphene zigzag ribbons possess a fast and a slow edge, characterized by edge state velocities that differ due to non-negligible next-nearest-neighbor hopping elements. By applying bosonization and renormalization…

An energy gap can be opened in the electronic spectrum of graphene by lifting its sublattice symmetry. In bilayers, it is possible to open gaps as large as 0.2 eV. However, these gaps rarely lead to a highly insulating state expected for…

We observe a giant increase of the infrared intensity and a softening of the in-plane antisymmetric phonon mode Eu (~0.2 eV) in bilayer graphene as a function of the gate-induced doping. The phonon peak has a pronounced Fano-like asymmetry.…

Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their…

Metal/graphene interfaces generated by electrode deposition induce barriers or potential modulations influencing the electronic transport properties of graphene based devices. However, their impact on the local mechanical properties of…

Gapped bilayer graphene can support the presence of intragap states due to kink gate potentials applied to the graphene layers. Electrons in these states display valley-momentum locking, which makes them attractive for topological…

The quantum Hall effect is the seminal example of topological protection, as charge carriers are transmitted through one-dimensional edge channels where backscattering is prohibited. Graphene has made its marks as an exceptional platform to…

We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range…

The electronic conductance of graphene-based bilayer flake systems reveal different quantum interference effects, such as Fabry-P\'erot resonances and sharp Fano antiresonances on account of competing electronic paths through the device.…

Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the doping and the energy level alignment in the nanojunction, thereby…