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Edge states in narrow quasi two-dimensional nanostructures determine, to a large extent, their electric, thermoelectric and magnetic properties. Non-magnetic edge states may quite often lead to topological insulator type behavior. However…

介观与纳米尺度物理 · 物理学 2017-10-31 Stefan Krompiewski , Gianaurelio Cuniberti

Two-dimensional (2D) topological electronic insulators are known to give rise to gapless edge modes, which underlie low energy dynamics, including electrical and thermal transport. This has been thoroughly investigated in the context of…

介观与纳米尺度物理 · 物理学 2022-05-10 Udit Khanna , Yuval Gefen , Ora Entin-Wohlman , Amnon Aharony

The edge states in the hybrid system of single-layer and double-layer graphene are studied in the tight-binding model theoretically. The edge states in one side of the interface between single-layer and double-layer graphene are shown to…

介观与纳米尺度物理 · 物理学 2012-04-03 Yasumasa Hasegawa , Mahito Kohmoto

We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n…

介观与纳米尺度物理 · 物理学 2011-12-19 Hisao Miyazaki , Michael Lee , Song-Lin Li , Hidefumi Hiura , Kazuhito Tsukagoshi , Akinobu Kanda

Distribution of charge induced by a gate voltage in a graphene strip is investigated. We calculate analytically the charge profile and demonstrate a strong(macroscopic) charge accumulation along the boundaries of a micrometers-wide strip.…

介观与纳米尺度物理 · 物理学 2008-06-04 P. G. Silvestrov , K. B. Efetov

We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular…

We study the effect of spatial modulations in the interlayer hopping of graphene bilayers, such as those that arise upon shearing or twisting. We show that their single-particle physics, characterized by charge accumulation and recurrent…

介观与纳米尺度物理 · 物理学 2012-05-24 Pablo San-Jose , Jose Gonzalez , Francisco Guinea

An interesting property of zigzag graphene nanoribbons is the presence of edge states which are extended along its borders but localized in the transverse direction. We show that because of this property, electron transport through an…

介观与纳米尺度物理 · 物理学 2009-09-02 Gonzalo Usaj

We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it…

介观与纳米尺度物理 · 物理学 2015-03-24 Diana A. Cosma , Marcin Mucha-Kruczynski , Henning Schomerus , Vladimir I. Fal'ko

Coherent spin-dependent transport through a junction containing of Normal/Ferromagnetic/Normal bilayer graphene nanoribbon with zigzag edges is investigated by using Landauer formalism. In a more realistic set-up, the exchange field is…

介观与纳米尺度物理 · 物理学 2014-03-05 Vahid Derakhshan , Hosein Cheraghchi

The tight-binding model of bilayer graphene is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the…

介观与纳米尺度物理 · 物理学 2015-05-14 L. A. Falkovsky

We investigate zero-temperature plasmon modes in a double-layer bilayer graphene structure under a perpendicular electrostatic bias. The numerical results demonstrate that there exist two collective modes which are undamped in the long…

介观与纳米尺度物理 · 物理学 2021-11-17 Nguyen Van Men , Nguyen Quoc Khanh , Dang Khanh Linh

Edge states in biased bilayer graphene in a magnetic field are studied within the four-band continuum model. The analysis is done for the semi-infinite graphene plane and for the graphene ribbon of a finite width, in the cases of zigzag and…

介观与纳米尺度物理 · 物理学 2013-11-19 P. K. Pyatkovskiy

Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The primary challenge in modulating this gap has been the absence…

We investigate the effect of different edge types on the statistical properties of both the energy spectrum of closed graphene billiards and the conductance of open graphene cavities in the semiclassical limit. To this end, we use the…

介观与纳米尺度物理 · 物理学 2011-11-15 J. Wurm , K. Richter , I. Adagideli

Twisted bilayer graphene (TBG) realizes a highly tunable, strongly interacting system featuring superconductivity and various correlated insulating states. We establish gate-defined wires in TBG with proximity-induced spin-orbit coupling as…

强关联电子 · 物理学 2022-02-23 Alex Thomson , Ina Sorensen , Stevan Nadj-Perge , Jason Alicea

Materials with flat electronic bands often exhibit exotic quantum phenomena owing to strong correlations. Remarkably, an isolated low-energy flat band can be induced in bilayer graphene by simply rotating the layers to 1.1$^{\circ}$,…

介观与纳米尺度物理 · 物理学 2019-01-29 Matthew Yankowitz , Shaowen Chen , Hryhoriy Polshyn , K. Watanabe , T. Taniguchi , David Graf , Andrea F. Young , Cory R. Dean

We study the electron transmission through the domain boundary on bilayer graphene separating AB and BA stacking regions. Using the effective continuum model, we calculate the electron transmission probability as a function of the electron…

介观与纳米尺度物理 · 物理学 2015-06-16 Mikito Koshino

In this paper, we study the quantum properties of a bilayer graphene with (asymmetry) line defects. The localized states are found around the line defects. Thus, the line defects on one certain layer of the bilayer graphene can lead to an…

介观与纳米尺度物理 · 物理学 2016-11-23 Xiao-Ming Zhao , Ya-Jie Wu , Chan Chen , Ying Liang , Su-Peng Kou

Conduction between graphene layers is suppressed by momentum conservation whenever the layer stacking has a rotation. Here we show that phonon scattering plays a crucial role in facilitating interlayer conduction. The resulting dependence…

介观与纳米尺度物理 · 物理学 2015-06-12 V. Perebeinos , J. Tersoff , Ph. Avouris