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The effect of an hexagonal boron nitride (hBN) layer close aligned with twisted bilayer graphene (TBG) is studied. At sufficiently low angles between twisted bilayer graphene and hBN, $\theta_{hBN} \lesssim 2^\circ$, the graphene electronic…

强关联电子 · 物理学 2020-10-28 Tommaso Cea , Pierre A. Pantaleon , Francisco Guinea

The existence of Bloch flat bands provides an facile pathway to realize strongly correlated phenomena in materials. Using density-functional theory and tight-binding approach, we show that the flat bands can form in twisted bilayer of…

材料科学 · 物理学 2020-03-04 Xing-Ju Zhao , Yang Yang , Dong-Bo Zhang , Su-Huai Wei

Moir\'e materials offer a versatile platform for engineering excitons with unprecedented control, promising next-generation optoelectronic applications. While continuum models are widely used to study moir\'e excitons due to their…

材料科学 · 物理学 2025-10-08 Indrajit Maity , Johannes Lischner , Arash A. Mostofi , Ángel Rubio

Point defects in hexagonal boron nitride (hBN) have attracted growing attention as bright single-photon emitters. However, understanding of their atomic structure and radiative properties remains incomplete. Here we study the excited states…

材料科学 · 物理学 2020-11-10 Shiyuan Gao , Hsiao-Yi Chen , Marco Bernardi

We demonstrate that the valence energy-loss function of hexagonal boron nitride (hBN) displays a strong anisotropy in shape, excitation energy and dispersion for momentum transfer q parallel or perpendicular to the hBN layers. This is…

Principal characteristics of interlayer interaction and relative motion of hexagonal boron nitride (h-BN) layers are investigated by the first-principles method taking into account van der Waals interactions. Dependences of the interlayer…

介观与纳米尺度物理 · 物理学 2016-04-13 Alexander V. Lebedev , Irina V. Lebedeva , Andrey A. Knizhnik , Andrey M. Popov

Biased bilayer graphene (BBG) is a variable band gap semiconductor, with a strongly field-dependent band gap of up to $300 \, \text{meV}$, making it of particular interest for graphene-based nano-electronic and -photonic devices. The…

介观与纳米尺度物理 · 物理学 2022-03-21 Mikkel Ohm Sauer , Thomas Garm Pedersen

Local interlayer charge polarization of twisted bilayer hexagonal boron nitride (t2BN) is calculated and parametrized as a function of twist angle and perpendicular electric fields through tight-binding calculations on lattice relaxed…

介观与纳米尺度物理 · 物理学 2024-10-15 Fengping Li , Dongkyu Lee , Nicolas Leconte , Srivani Javvaji , Jeil Jung

In this paper we theoretically describe the absorption of hexagonal boron nitride (hBN) single layer. We develop the necessary formalism and present an efficient method for solving the Wannier equation for excitons. We give predictions for…

介观与纳米尺度物理 · 物理学 2019-10-18 J. C. G. Henriques , G. B. Ventura , C. D. M. Fernandes , N. M. R. Peres

Equilibrium interlayer exciton condensation is common in bilayer quantum Hall systems and is characterized by spontaneous phase coherence between isolated layers. It has been predicted that similar physics can occur in the absence of a…

介观与纳米尺度物理 · 物理学 2025-09-16 Yongxin Zeng , Allan H. MacDonald , Nemin Wei

Encapsulating graphene in hexagonal Boron Nitride has several advantages: the highest mobilities reported to date are achieved in this way, and precise nanostructuring of graphene becomes feasible through the protective hBN layers.…

介观与纳米尺度物理 · 物理学 2021-01-04 Yongping Du , Ning Xu , Xianqing Lin , Antti-Pekka Jauho

The relative twist angle in heterostructures of two-dimensional (2D) materials with similar lattice constants result in a dramatic alteration of the electronic properties. Here, we investigate the electrical and magnetotransport properties…

介观与纳米尺度物理 · 物理学 2021-06-09 Manabendra Kuiri , Saurabh Kumar Srivastav , Sujay Ray , Kenji Watanabe , Takashi Taniguchi , Tanmoy Das , Anindya Das

We derive electronic tight-binding Hamiltonians for strained graphene, hexagonal boron nitride and transition metal dichalcogenides based on Wannier transformation of {\it ab initio} density functional theory calculations. Our microscopic…

介观与纳米尺度物理 · 物理学 2018-08-14 Shiang Fang , Stephen Carr , Miguel A. Cazalilla , Efthimios Kaxiras

We combine electron energy-loss spectroscopy and first-principles calculations based on density-functional theory (DFT) to identify the lowest indirect exciton state in the in-plane charge response of hexagonal boron nitride (h-BN) single…

介观与纳米尺度物理 · 物理学 2018-01-10 R. Schuster , C. Habenicht , M. Ahmad , M. Knupfer , B. Büchner

Realizing direct-bandgap quantum dots working within the deep-ultraviolet frequency is highly desired for electro-optical and biomedical applications while remaining challenging. In this work, we combine the first-principles many-body…

材料科学 · 物理学 2023-12-11 Linghan Zhu , Yizhou Wang , Li Yang

We present an efficient implementation of the Bethe-Salpeter equation (BSE) for optical properties of materials in the projector augmented wave method GPAW. Single-particle energies and wave functions are obtained from the GLLBSC functional…

材料科学 · 物理学 2012-07-20 Jun Yan , Karsten W. Jacobsen , Kristian S. Thygesen

Since the discovery of superconductive twisted bilayer graphene which initiated the field of twistronics, moir\'e systems have not ceased to exhibit fascinating properties. We demonstrate that in boron nitride twisted bilayers, for a given…

材料科学 · 物理学 2023-03-29 Sylvain Latil , Hakim Amara , Lorenzo Sponza

Spontaneous orbital magnetism observed in twisted bilayer graphene (tBG) on nearly aligned hexagonal boron nitride (BN) substrate builds on top of the electronic structure resulting from combined G/G and G/BN double moire interfaces. Here…

介观与纳米尺度物理 · 物理学 2021-02-24 Jiseon Shin , Youngju Park , Bheema Lingam Chittari , Jeil Jung

In bilayers of semiconducting transition metal dichalcogenides, the twist angle between layers can be used to introduce a highly regular periodic potential modulation on a length scale that is large compared to the unit cell. In such…

材料科学 · 物理学 2022-04-27 N. Götting , F. Lohof , C. Gies

We study the energies and optical spectra of excitons in twisted bilayers of anisotropic van der Waals semiconductors exhibiting moir\'e patterns, taking phosphorene as a case study. Following the electronic Hamiltonian introduced by us in…

介观与纳米尺度物理 · 物理学 2023-08-08 Isaac Soltero , David A. Ruiz-Tijerina