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相关论文: The Emerging Weak Antilocalization Effect in Semim…

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We have investigated the weak antilocalization (WAL) effect in the p-type Bi$_2$Se$_{2.1}$Te$_{0.9}$ topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The…

强关联电子 · 物理学 2017-10-12 K. Shrestha , D. Graf , V. Marinova , B. Lorenz , C. W. Chu

The binary pnictide semimetals have attracted considerable attention due to their fantastic physical properties that include topological effects, negative magnetoresistance, Weyl fermions and large non-saturation magnetoresistance. In this…

材料科学 · 物理学 2022-04-19 Yong Zhang , Xinliang Huang , Wenshuai Gao , Xiangde Zhu , Li Pi

A large number of half-Heusler compounds have been recently proposed as three-dimensional (3D) topological insulators (TIs) with tunable physical properties.However, no transport measurements associated with the topological surface states…

The anomalous magnetoresistance caused by the weak antilocalization (WAL) effects in 200-nm HgTe films is experimentally studied. The film is a high quality 3D topological insulator with much stronger spatial separation of surface states…

介观与纳米尺度物理 · 物理学 2021-02-04 M. L. Savchenko , D. A. Kozlov , Z. D. Kvon , N. N. Mikhailov , S. A. Dvoretsky

We report transport studies on the layered van der Waals topological crystalline insulator Ta$_2$Pd$_3$Te$_5$. The temperature-dependent resistance at high temperature is dominated by a bulk insulating gap and tend to saturate at low…

The weak antilocalization (WAL) effect is known as a quantum correction to the classical conductivity, which never appeared in two-dimensional magnets. In this work, we reported the observation of a WAL effect in the van der Waals…

We report, an experimental evidence of surface states (SS) driven magneto-transport in a Bi0.85Sb0.15 single crystal. Detailed high field (up to 12T) and low temperature (down to 2K) magneto-transport measurements are been carried out on…

材料科学 · 物理学 2022-05-06 Yogesh Kumar , VPS Awana

Weak antilocalization (WAL) is expected whenever strong spin-orbit coupling or scattering comes into play. Spin-orbit coupling in the bulk states of a topological insulator is very strong, enough to result in the topological phase…

介观与纳米尺度物理 · 物理学 2011-10-03 Hai-Zhou Lu , Shun-Qing Shen

Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge carrier concentrations. At low charge carrier density the WAL curves scale with the normal component of the magnetic field,…

强关联电子 · 物理学 2017-05-17 K. Shrestha , M. Chou , D. Graf , H. D. Yang , B. Lorenz , C. W. Chu

We report transport properties for layered BiCh2-based (Ch = S, Se) superconductors LaO1-xFxBiS2-ySey (x = 0.2, 0.5, y = 0-1.05) and the observation of weak antilocalization (WAL). Electrical resistivity and Hall coefficients for the…

We report results of a magneto-transport study on thin films of the topological semi-metal candidate PdSb$_{2}$ (PS). We observe a positive correction to magneto-conductivity at low temperatures, which is a signature of weak…

强关联电子 · 物理学 2022-02-04 Shama , Aastha Vasdev Dinesh Kumar , Goutam Sheet , Yogesh Singh

The effect of 50\% Cu doping at the Au site in the topological Dirac semimetal CaAuAs is investigated through electronic band structure calculations, electrical resistivity, and magnetotransport measurements. Electronic structure…

强关联电子 · 物理学 2022-08-15 Sudip Malick , Arup Ghosh , Chanchal K. Barman , Aftab Alam , Z. Hossain , Prabhat Mandal , J. Nayak

Weak antilocalization (WAL), an increase in the electrical conductivity at low temperatures associated with the suppression of electron localization due to quantum interference effects, is often observed in topological materials. In this…

介观与纳米尺度物理 · 物理学 2025-01-14 Longfei Sun , Yue Sun , Qiang Hou , R. Sankar , R. Kalaivanan , Xiaofeng Xu , Zhixiang Shi , Tsuyoshi Tamegai

We report on a systematic study of Hall effect using high quality single crystals of type-II Weyl semimetal WTe2 with the applied magnetic field B//c. The residual resistivity ratio of 1330 and the large magnetoresistance of 1.5\times10^6 %…

材料科学 · 物理学 2017-10-03 Rajveer Jha , Ryuji Higashinaka , Tatsuma D. Matsuda , Raquel A. Ribeiro , Yuji Aoki

Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of the intrinsic p-type nature of Te crystal. By atomic layer…

介观与纳米尺度物理 · 物理学 2020-05-20 Chang Niu , Gang Qiu , Yixiu Wang , Zhuocheng Zhang , Mengwei Si , Wenzhuo Wu , Peide D. Ye

We have studied the carrier transport in two topological insulator (TI) Bi$_{2}$Te$_{3}$ microflakes between 0.3 and 10 K and under applied backgate voltages ($V_{\rm BG}$). Logarithmic temperature dependent resistance corrections due to…

介观与纳米尺度物理 · 物理学 2015-03-13 Shao-Pin Chiu , Juhn-Jong Lin

Here we report, the successful synthesis of single crystals of topological semimetal (TSM) candidate, PdSn$_4$ using the self-grown route. The synthesized crystal is well characterized through X-ray diffraction (XRD), field emission…

材料科学 · 物理学 2023-05-17 N. K. Karn , M. M. Sharma , V. P. S. Awana

We report the synthesis, structural characterization, and investigation of electrical transport, magnetic and specific heat properties of bulk semiconducting layered material Ta$_2$Ni$_3$Te$_5$. Ta$_2$Ni$_3$Te$_5$ crystallizes in the…

强关联电子 · 物理学 2024-06-13 Prabuddha Kant Mishra , Soumen Ash , Ashok Kumar Ganguli

In this study, we address the phase coherent transport in a sub-micrometer-sized Hall bar made of epitaxial Bi2Se3 thin film by probing the weak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K. The WAL effect is well…

In chalcogenide topological insulator materials, two types of magneto-resistance (MR) effects are widely discussed: a positive MR dip around zero magnetic field associated with the weak antilocalization (WAL) effect and a linear MR effect…

介观与纳米尺度物理 · 物理学 2015-12-31 Z. H. Wang , L. Yang , X. T. Zhao , Z. D. Zhang , Xuan P. A. Gao
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