相关论文: Zn-doped P-type InAs Nanocrystal Quantum Dots
Tin monosulfide (SnS) is a naturally p-type semiconductor with a layered crystal structure, but no reliable n-type SnS has been obtained by conventional aliovalent ion substitution. In this work, carrier polarity conversion to n-type was…
Implantation and diffusion of Zn dopant into bulk InP:S were performed. Zn concentration profiles were investigated by secondary ion mass spectrometry and capacitance-voltage method. We find that thermodynamic conditions of annealing…
Carrier-dopant exchange interactions in Mn-doped PbS colloidal quantum dots were studied by circularly polarized magneto-photoluminescence. Mn substitutional doping leads to paramagnetic behavior down to 5 K. While undoped quantum dots show…
Although zinc oxide is a promising material for the fabrication of short wavelength optoelectronic devices, p-type doping is a step that remains challenging for the realization of diodes. Out of equilibrium methods such as ion implantation…
Transition metal doping is known to increase the photosensitivity to visible light for photocatalytically active ZnO. We report on the electronic structure of nano-crystalline Fe:ZnO, which has recently been shown to be an efficient…
Doping in transition metal dichalcogenide (TMD) monolayers provides a powerful method to precisely tailor their electronic, optical, and catalytic properties for advanced technological applications, including optoelectronics, catalysis, and…
The influences of Si sheet doping levels on the properties of InAs/GaAs quantum dots (QDs) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). AFM measurements reveal that Si sheet doping doesn't change the…
InN superconductivity is very special among III-V semiconductors, because other III-V semiconductor (like GaAs, GaN, InP, InAs etc.) usually lacks strong covalent bonding and seldom shows superconductivity at low-temperature. In this paper,…
Based on the full band electronic structure calculations, first we consider the effect of n-type doping on the optical absorption and the refractive index in wurtzite InN and GaN. We identify quite different dielectric response in either…
We report a first principles systematic study of atomic, electronic, and magnetic properties of hydrogen saturated silicon nanowires (H-SiNW) which are doped by transition metal (TM) atoms placed at various interstitial sites. Our results…
In2O3 is a prototype wide-band-gap semiconductor that exhibits metallic conductivity when highly doped with Sn while retaining a high degree of transparency to visible light. It is widely used as a transparent window/electrode in solar…
Cu doped transparent ZnO thin films were spin coated on conductive glass substrates. The samples were subsequently annealed in air for 1 hour at 500 0C in order to form the phase of ZnO. ZnO samples were doped with different Cu molar…
We report a combined theoretical and experimental search for thermoelectric materials based on semiconducting zinc antimony. Influence of three new doping elements (sodium, potassium and boron) on the electronic properties is investigated…
We investigate acceptor and donor states in GaN nanocrystals doped with a single substitutional impurity. Quantum dots (QD's) of zinc-blende structure and spherical shape are considered with the radius ranging from 4.5 to 67.7 A. The…
We observed a large decrease of Tc by no more than 3 at.% of Zn doped to the optimized superconductor LaFeAsO0.85 (Tc = 26 K), confirmed by measurements of electrical resistivity, magnetic susceptibility, specific heat, M\"ossbauer…
Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectronic and optoelectronic devices. Their miniaturization requires contactless characterization of doping with nanometer scale resolution. Here,…
SnSe monolayer with orthorhombic Pnma GeS structure is an important two-dimensional (2D) indirect band gap material at room temperature. Based on first-principles density functional theory calculations, we present systematic studies on the…
With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here…
The power factor of pure p-type ZnSb has been calculated via ab initio simulations assuming that the carrier concentrations are due to the doping effect of intrinsic zinc vacancies. With a vacancy concentration close to the experimental…
Zinc sulphide (ZnS) is a non-toxic, wide-bandgap II-VI semiconductor with well-established optoelectronic properties. This work presents a systematic, concentration-dependent comparison of PEG and PVP across two scalable aqueous routes,…