相关论文: Microcontroller Based Portable Measurement System …
We present a method to systematically locate and extract capacitive and inductive losses in superconducting resonators at microwave frequencies by use of mixed-material, lumped element devices. In these devices, ultra-low loss titanium…
Microelectromechanical systems and integrated photonics provide the basis for many reliable and compact circuit elements in modern communication systems. Electro-opto-mechanical devices are currently one of the leading approaches to realize…
Capacitance-voltage characteristics of individual germanium nanowire field effect transistors were directly measured and used to assess carrier mobility in nanowires for the first time; thereby removing uncertainties in calculated mobility…
Future measurements of the millimeter-wavelength sky require a low-loss superconducting microstrip, typically made from niobium and silicon-nitride, coupling the antenna to detectors. We propose a simple device for characterizing these…
Nanoscale electronic devices are of great interest for all kinds of applications like switching, energy conversion and sensing. The objective of this chapter, however, is not to discuss specific devices or applications. Rather it is to…
We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around…
As superconducting quantum computing continues to advance at an unprecedented pace, there is a compelling demand for the innovation of specialized electronic instruments that act as crucial conduits between quantum processors and host…
We present a comprehensive investigation of self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) through technology computer-aided design (TCAD) simulations and phonon Monte Carlo (MC) simulations. With…
This contribution presents the design, production, and initial testing of newly developed 4H-SiC Low Gain Avalanche Detectors (LGADs). The evaluation includes performance metrics such as the internal gain layer's efficiency in enhancing…
Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor…
The development of new detectors based on Silicon Carbide (SiC) is currently a topic of interest within the scientific community. The significant features of SiC make it highly promising for detecting charged particles, neutrons, and…
Advances in power electronics have made it possible to achieve high power levels, e.g., reaching GW in grids, or alternatively high output bandwidths, e.g., beyond MHz in communication. Achieving both simultaneously, however, remains…
Modern bandgap engineered electronic devices are typically made of multi-semiconductor multi-layer heterostructures that pose a major challenge to silicon-era characterization methods. As a result, contemporary bandgap engineering relies…
The carrier emission efficiency of light emitting diodes is of fundamental importance for many technological applications, including the performance of GaN and other semiconductor photocathodes. We have measured the evolution of the emitted…
The physicochemical processes at the surfaces of semiconductor nanostructures involved in electrochemical and sensing devices are strongly influenced by the presence of intrinsic or extrinsic defects. To reveal the surface controlled…
Supercontinua are broadband spectra that are essential to optical spectroscopy, sensing, imaging, and metrology. They are generated from ultrashort laser pulses through nonlinear frequency conversion in fibers, bulk media, and…
We use a drop-port geometry to study power transfer in silicon nitride on-chip microresonator frequency comb generators. In sharp contrast with the traditional transmission geometry, we observe smooth output spectra with comparable powers…
Efficient and controlled charge transport in networks of semiconducting single-walled carbon nanotubes is the basis for their application in electronic devices, especially in field-effect transistors and thermoelectrics. The recent advances…
Outstanding wide-bandgap semiconductor material such as gallium nitride (GaN) has been extensively utilized in power electronics, radiofrequency amplifiers, and harsh environment devices. Due to its quantum confinement effect in enabling…
This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a…