相关论文: Skyrmion-mediated Nonvolatile Ternary Memory

We propose a two terminal nanomagnetic memory element based on magnetization reversal of a perpendicularly magnetized nanomagnet employing a unipolar voltage pulse that modifies the perpendicular anisotropy of the system. Our work…

Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…

Magnetic skyrmion-based data storage and unconventional computing devices have gained increasing attention due to their topological protection, small size, and low driving current. However, skyrmion creation, deletion, and motion are still…

Prospective spintronic memory and logic devices will benefit from the negligible stray field and ultrafast magnetic dynamics inherent to antiferromagnets [1]. However, realizing isothermal, nonvolatile, and deterministic switching of…

In this work, we utilize voltage controlled magnetic anisotropy (VCMA) to manipulate magnetic skyrmions that are fixed in space. Memory devices based on this strategy can potentially be of smaller footprint and better energy efficiency than…

One method of creating and annihilating skyrmions in confined geometries is to use Voltage-Controlled Magnetic Anisotropy (VCMA) [1, 2, 3]. Previous study shows that robust voltage controlled ferromagnetic reversal from up to down state in…

We propose an all-electric implementation of a precessionally switched perpendicular magnetic anisotropy magneto-tunneling-junction (p-MTJ) based toggle memory cell where data is written with voltage-controlled-magnetic-anisotropy (VCMA)…

Recent work [1,2] suggests that ferromagnetic reversal with spin transfer torque (STT) requires more current in a system in the presence of DMI than switching a typical ferromagnet of the same dimensions and perpendicular magnetic…

The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited…

Straintronic magneto-tunneling junction (s-MTJ) switches, whose resistances are controlled with voltage-generated strain in the magnetostrictive free layer of the MTJ, are extremely energy-efficient switches that would dissipate a few aJ of…

A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…

We propose an improved scheme for low-power writing of binary bits in non-volatile (multiferroic) magnetic memory with electrically generated mechanical stress. Compared to an earlier idea [Tiercelin, et al., J. Appl. Phys., 109, 07D726…

This paper investigates the impact of thermal stability relaxation in double-barrier magnetic tunnel junctions (DMTJs) for energy-efficient spin-transfer torque magnetic random access memories (STT-MRAMs) operating at the liquid nitrogen…

Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide…

We propose a novel binary and quaternary memory device based upon skyrmion states induced by the oblique field in a square magnetic island. To describe stable states and dynamics of the skyrmion, we employ the lattice model that uses the…

The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability issues therefore hinder the timetable for STT Magnetic…

Magnetic skyrmions have attracted considerable interest, especially after their recent experimental demonstration at room temperature in multilayers. The robustness, nanoscale size and non-volatility of skyrmions have triggered a…

Using micromagnetic simulations we demonstrate core reversal of a fixed magnetic skyrmion by modulating the perpendicular magnetic anisotropy of a nanomagnet with an electric field. We can switch reversibly between two skyrmion states and…

Electrical manipulation of skyrmions attracts considerable attention for its rich physics and promising applications. To date, such a manipulation is realized mainly via spin-polarized current based on spin-transfer torque or spin-orbital…

Magnetic skyrmions are emerging as potential candidates for next generation non-volatile memories. In this paper, we propose an in-memory binary neural network (BNN) accelerator based on the non-volatile skyrmionic memory, which we call as…