相关论文: Skyrmion-mediated Nonvolatile Ternary Memory
Highly efficient information processing in brain is based on processing and memory components called synapses, whose output is dependent on the history of the signals passed through them. Here we have developed an artificial synapse with…
The design of the buffer manager in database management systems (DBMSs) is influenced by the performance characteristics of volatile memory (DRAM) and non-volatile storage (e.g., SSD). The key design assumptions have been that the data must…
Altermagnets with nonrelativistic momentum-dependent spin splitting and compensated net magnetic moments have recently garnered significant interest in spintronics, particularly as pinning layers in magnetic tunnel junctions (MTJs).…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high…
Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-free switching of perpendicular magnetization through SHE…
We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs…
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…
Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…
The domain wall-magnetic tunnel junction (DW-MTJ) is a versatile device that can simultaneously store data and perform computations. These three-terminal devices are promising for digital logic due to their nonvolatility, low-energy…
There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation.…
Antiferromagnetic Tunnel Junctions (AFMTJs) enable picosecond switching and femtojoule writes through ultrafast sublattice dynamics. We present the first end-to-end AFMTJ simulation framework integrating multi-sublattice…
Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two…
Magnetic skyrmions are exciting candidates for energy-efficient computing due to their non-volatility, detectability,and mobility. A recent proposal within the paradigm of reversible computing enables large-scale circuits composed…
Since it is undesirable to require an external magnetic field for on-chip memory applications, we investigate the use of a Rashba effective field alternatively for assisting the electric-field-induced switching operation of a three terminal…
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier…
Superparamagnetic tunnel junctions (SMTJs) have emerged as a competitive, realistic nanotechnology to support novel forms of stochastic computation in CMOS-compatible platforms. One of their applications is to generate random bitstreams…
We demonstrate that thermally stable perpendicular magnetic tunnel junctions (pMTJs), widely used in spin-transfer torque magnetic random-access memory, can be actuated with nanosecond pulses to exhibit tunable stochastic behavior. This…
Recurrent neural networks (RNNs) have shown excellent performance in processing sequence data. However, they are both complex and memory intensive due to their recursive nature. These limitations make RNNs difficult to embed on mobile…