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Multi-terminal topological devices are a new generation of electronic devices with quantized properties robust against imperfections. In magnetic topological insulators, dissipationless edge states give functional devices in zero magnetic…

Breaking time-reversal symmetry in three-dimensional topological insulator thin films can lead to different topological quantum phases, such as the Chern insulator (CI) phase, and the axion insulator (AI) phase. Using first-principles…

强关联电子 · 物理学 2021-05-18 N. Pournaghavi , M. F. Islam , Rajibul Islam , Carmine Autieri , Tomasz Dietl , C. M. Canali

Fractional Chern insulators are the proposed phases of matter mimicking the physics of fractional quantum Hall states on a lattice without an overall magnetic field. The notion of Floquet fractional Chern insulators refers to the potential…

This work explores the topological properties of altermagnets, a novel class of collinear magnetic materials. We employ equivariant K-theory of magnetic groups and Hamiltonian models to formulate a robust $C^z_4 \mathbb{T}$ topological…

材料科学 · 物理学 2025-03-03 Rafael Gonzalez-Hernandez , Higinio Serrano , Bernardo Uribe

We show that interacting electrons in a flat Chern band can form, in addition to fractional Chern insulators, a chiral $f$-wave topological superconductor that hosts neutral Majorana fermion edge modes. Superconductivity emerges from an…

超导电性 · 物理学 2025-10-23 Daniele Guerci , Ahmed Abouelkomsan , Liang Fu

Non-Hermitian systems as theoretical models of open or dissipative systems exhibit rich novel physical properties and fundamental issues in condensed matter physics.We propose a generalized local-global correspondence between the…

量子物理 · 物理学 2023-08-11 Annan Fan , Shi-Dong Liang

The synthetic Floquet lattice, generated by multiple strong drives with mutually incommensurate frequencies, provides a powerful platform for the quantum simulation of topological phenomena. In this study, we propose a 4-band tight-binding…

量子物理 · 物理学 2024-08-27 Lingxiao Lei , Weichen Wang , Guangyao Huang , Shun Hu , Xi Cao , Xinfang Zhang , Mingtang Deng , Pingxing Chen

A family of semiconductors called as Chern band insulator are shown to host exciton bands with non-zero topological Chern integers and chiral exciton edge modes. Using a prototypical two-band Chern insulator model, we calculate a…

介观与纳米尺度物理 · 物理学 2017-10-11 Ke Chen , Ryuichi Shindou

Impurities embedded in electronic systems induce bound states which under certain circumstances can hybridize and lead to impurity bands. Doping of insulators with impurities has been identified as a promising route towards engineering…

介观与纳米尺度物理 · 物理学 2019-04-17 Emma L. Minarelli , Kim Pöyhönen , Gerwin A. R. van Dalum , Teemu Ojanen , Lars Fritz

We present a complete topological characterization of a bilayer composite of two Chern insulators (specifically, Haldane models) and explicitly establish the bulk-boundary correspondences. We show that an appropriately defined Chern number…

统计力学 · 物理学 2021-06-15 Sourav Bhattacharjee , Souvik Bandyopadhyay , Diptiman Sen , Amit Dutta

Recently, fractional quantum anomalous Hall effects have been discovered in two-dimensional moir\'{e} materials when a topologically nontrivial band with Chern number $\mathcal{C}=1$ is partially doped. Remarkably, superlattice Bloch bands…

介观与纳米尺度物理 · 物理学 2025-07-30 Vo Tien Phong , Cyprian Lewandowski

We consider twisted bilayer graphene on a transition metal dichalcogenide substrate, where proximity-induced spin-orbit coupling significantly alters the eight flat bands which occur near the magic angle. The resulting band structure…

强关联电子 · 物理学 2020-12-24 Tianle Wang , Nick Bultinck , Michael P. Zaletel

We develop a topological theory for disordered Weyl semimetals in the framework of gauge invariance of replica formalism and boundary-bulk correspondence of Chern insulators. An anisotropic topological $\theta$-term is analytically derived…

介观与纳米尺度物理 · 物理学 2016-11-21 Y. X. Zhao , Z. D. Wang

The appearance of topologically protected states at the surface of an ordinary insulator is a rare occurrence and to date only a handful of materials are known for having this property. An intriguing question concerns the possibility of…

介观与纳米尺度物理 · 物理学 2014-07-16 Igor Popov , Mauro Mantega , Awadhesh Narayan , Stefano Sanvito

Robustness against disorder and defects is a pivotal advantage of topological systems, manifested by absence of electronic backscattering in the quantum Hall and spin-Hall effects, and unidirectional waveguiding in their classical analogs.…

介观与纳米尺度物理 · 物理学 2021-03-24 Zhe Zhang , Pierre Delplace , Romain Fleury

Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant computing technologies. However, it remains elusive about how…

When one of the graphene layers of Magic Angle Twisted Bilayer Graphene is nearly aligned with its hexagonal boron nitride substrate (a configuration dubbed TBG/hBN), the active electronic bands are nearly flat, and have a Chern number…

强关联电子 · 物理学 2019-12-25 Cécile Repellin , T. Senthil

We study a family of excitonic quantum phase transitions describing the evolution of a bilayer metallic state to an inter-layer coherent state where excitons condense. We argue that such transitions can be continuous and exhibit a non-Fermi…

强关联电子 · 物理学 2024-06-28 Zhengyan Darius Shi , Hart Goldman , Zhihuan Dong , T. Senthil

We consider a rhombohedral-stacked $N$-layer graphene coupled to a monolayer of Haldane model. We show that high order Dirac points in multilayer graphene can be gapped out by topological proximity effect of the Haldane model layer, leading…

介观与纳米尺度物理 · 物理学 2025-12-25 Yuejiu Zhao , Long Zhang , Fu-Chun Zhang

We propose characterization of the three-dimensional topological insulator by using the Chern number for the entanglement Hamiltonian (entanglement Chern number). Here we take the extensive spin partition of the system, that pulls out the…

介观与纳米尺度物理 · 物理学 2017-10-25 Hiromu Araki , Takahiro Fukui , Yasuhiro Hatsugai