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相关论文: Prediction and Characterization of Two-Dimensional…

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The biphenylene network (BPN) is a notable achievement in recent fabrication endeavors for conceiving new 2D materials. The stability of its boron nitride counterpart, BN-BPN, has been confirmed through numerical investigations. In this…

材料科学 · 物理学 2023-10-12 Kleuton Antunes Lopes Lima , Luiz Antonio Ribeiro Junior

Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in…

Searching for novel two-dimensional (2D) materials is highly desired in the field of nanoelectronics. We here propose a new 2D crystal barium tri-arsenide ($\mathrm{BaAs_3}$) with a series of encouraging functionalities. Being kinetically…

材料科学 · 物理学 2024-09-17 Ping Tang , Jun-Hui Yuan , Ya-Qian Song , Ming Xu , Kan-Hao Xue , Xiang-Shui Miao

In recent years, researchers have manifested their interest in the two-dimensional (2D) mono-elemental materials of group-VI elements because of their excellent optoelectronic, photovoltaic and thermoelectric properties. Despite the…

材料科学 · 物理学 2023-05-22 Jaspreet Singh , Ashok Kumar

Nitrides feature many interesting properties, such as a wide range of bandgaps suitable for optoelectronic devices including light-emitting diodes (LEDs), and piezoelectric response used in microelectromechanical systems (MEMS). Nitrides…

The elastic, electronic and optical properties of MNNi3 (M= Zn, Sn and Cu) have been calculated using the plane-wave ultrasoft pseudopotential technique which is based on the first-principles density functional theory (DFT) with generalized…

材料科学 · 物理学 2015-05-30 M. A. Helal , A. K. M. A. Islam

Based on DFT calculation, we predict that BiCN, i.e., bilayer Bi films passivated with -CN group, is a novel 2D Bi-based material with highly thermodynamic stability, and demonstrate that it is also a new kind of 2D TI with a giant SOC gap…

介观与纳米尺度物理 · 物理学 2016-07-27 Botao Fu , Yanfeng Ge , Wenyong Su , Wei Guo , Cheng-Cheng Liu

We performed high-throughput density functional theory calculations of optical matrix elements between band edges across a diverse set of non-magnetic two-dimensional monolayers with direct band gaps. Materials were ranked as potential…

材料科学 · 物理学 2025-08-15 A. F. Gómez-Bastidas , Karthik Sriram , A. C. Garcia-Castro , Oleg Rubel

The exploration of the superconductivity in two-dimensional materials has garnered significant attention due to their promising low-power applications and fundamental scientific interest. Here, we report some novel stable non-van der Waals…

超导电性 · 物理学 2025-05-22 Si-Yi Xiong , Peng Jiang , Yiming Wang , Yan-Ling Li

Two-dimensional (2D) semiconductors with direct and modest bandgap and ultrahigh carrier mobility are highly desired functional materials for nanoelectronic applications. Herein, we predict that monolayer CaP3 is a new 2D functional…

材料科学 · 物理学 2022-05-09 Ning Lu , Zhiwen Zhuo , Hongyan Guo , Ping Wu , Wei Fa , Xiaojun Wu , Xiao Cheng Zeng

Recent developments in the 2D materials laid emphasis on finding the materials with robust properties for variety of applications including the energy harvesting. The recent discovery of Janus monolayers with broken symmetry has opened up…

材料科学 · 物理学 2024-03-05 Anuja Kumari , Abhinav Nag , Santanu K. Maiti , Jagdish Kumar

By means of extensive ab initio calculations, a new two-dimensional (2D) atomic material tin selenide monolayer (coined as tinselenidene) is predicted to be a semiconductor with an indirect gap (1.45 eV) and a high hole mobility (of order…

材料科学 · 物理学 2020-09-22 Li-Chuan Zhang , Guangzhao Qin , Wu-Zhang Fang , Hui-Juan Cui , Qing-Rong Zheng , Qing-Bo Yan , Gang Su

Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2…

In$_2$Se$_3$ is a semiconductor material that can be stabilized in different crystal structures (at least one 3D and several 2D layered structures have been reported) with diverse electrical and optical properties. This feature has plagued…

Transition metal dichalcogenides (TMD) monolayers, holding potential as good sunlight absorbers, are promising materials for next-generation optoelectronic devices. They may enable ultrathin photovoltaic(PV) devices thanks to their…

材料科学 · 物理学 2022-11-28 C. Attaccalite , M. S. Prete , M. Palummo , O. Pulci

We have investigated the Raman spectrum and excitonic effects of the novel two-dimensional Ta$_2$Ni$_3$Te$_5$ structure. The monolayer is an indirect band gap semiconductor with an electronic band gap value of 0.09 eV and 0.38 eV,…

By performing high-throughput first-principles calculations combined with a semiempirical van der Waals dispersion correction, we have screened 74 direct- and 185 indirect-gap two dimensional (2D) nonmagnetic semiconductors from near 1000…

介观与纳米尺度物理 · 物理学 2022-12-12 Vei Wang , Gang Tang , Ren-Tao Wang , Ya-Chao Liu , Hiroshi Mizuseki , Yoshiyuki Kawazoe , Jun Nara , Wen-Tong Geng

In this work, using a hybrid density functional theory (DFT) based calculation, we propose a new two-dimensional (2D) B-C-N material, $g-B_{3}C_{2}N_{3}$, with the promising prospect of metal-free photocatalysis. A comprehensive…

材料科学 · 物理学 2022-07-14 Sreejani Karmakar , Souren Adhikary , Sudipta Dutta

Since the emergence of monolayer graphene as a promising two-dimensional material, many other monolayer and few-layer materials have been investigated extensively. An experimental study of few-layer Si2Te3 was recently reported, showing…

材料科学 · 物理学 2016-05-13 Yevgeniy Puzyrev , X. Shen , C. Combs , S. T. Pantelides

Two-dimensional (2D) materials with high carrier mobility and tunable magnetism are in high demand for nanoelectronics and spintronic applications. Herein, we predict a novel two-dimensional monolayer KTlO that possesses an indirect band…

介观与纳米尺度物理 · 物理学 2024-09-17 Ya-Qian Song , Jun-Hui Yuan , Li-Heng Li , Ming Xu , Jia-Fu Wang , Kan-Hao Xue , Xiang-Shui Miao