中文
相关论文

相关论文: Prediction and Characterization of Two-Dimensional…

200 篇论文

In$_2$Se$_3$ in the three-dimensional (3D) hexagonal crystal structure with space group $P6_1$ ($\gamma$-In$_2$Se$_3$) has a direct band gap of $\sim$1.8 eV and high absorption coefficient, making it a promising semiconductor material for…

We propose a new 2D semiconductor material (TTA-2D) based on the molecular structure of Thiophene-Tetrathia-Annulene (TTA). The TTA-2D structural, electronic, and optical properties were investigated using \textit{ab initio} methods. Our…

Two-dimensional (2D) materials are promising candidates for next-generation electronic devices. In this regime, insulating 2D ferromagnets, which remain rare, are of special importance due to their potential for enabling new device…

We conducted density functional theory (DFT) and molecular dynamics simulations to explore the mechanical/failure, thermal conductivity and stability, electronic and optical properties of three N-graphdiyne nanomembranes. Our DFT results of…

计算物理 · 物理学 2018-05-14 Bohayra Mortazavi , Meysam Makaremi , Masoud Shahrokhi , Zheyong Fan , Timon Rabczuk

Orthorhombic II-IV nitride semiconductors offer an expanded and more tunable material set with unique properties, while maintaining close compatibility with the wurtzite crystal structure of the III-nitrides. In particular, MgSiN2, a II-IV…

By using ab inito calculations within Density Functional Theory, we have explored the possible structures and various properties of porous AlN monolayer materials. Two kinds of porous AlN monolayer are identified, and the phonon dispersion…

材料科学 · 物理学 2020-04-22 Yanwei Luo , Jiahui Hu , Yu Jia

The spectrum of two-dimensional (2D) materials beyond graphene offers a remarkable platform to study new phenomena in condensed matter physics. Among these materials, layered hexagonal boron nitride (hBN), with its wide bandgap energy…

Low-dimensional Si-based semiconductors are unique materials that can both match well with the Si-based electronics and satisfy the demand of miniaturization in modern industry. Owing to the lack of such materials, many researchers put…

材料科学 · 物理学 2018-07-06 Yan Qian , Zhengwei Du , Renzhu Zhu , Haiping Wu , Erjun Kan , Kaiming Deng

Two-dimensional (2D) materials have revolutionized all areas of development of high-performance electronic devices. In particular, the unique electronic and optical properties of II--VI semiconductor nanoplatelets have been found to be very…

材料科学 · 物理学 2026-04-02 Alexander I. Lebedev

Nickel ditelluride (NiTe2) is a newly identified Type-II Dirac semimetal, showing novel characteristics in electronic transport and optical experiments. In this study, we explored the nonlinear optical properties of two-dimensional NiTe2…

A two-dimensional (2D) ZnS photonic crystal was deposited on the surface of a one-dimensional (1D) III-nitride micro cavity light-emitting diode (LED), to intermix the light extraction features of both structures (1D+2D). The deposition of…

Ga2O3 is a wide-band-gap semiconductor of great interest for applications in electronics and optoelectronics. Two-dimensional (2D) Ga2O3 synthesized from top-down or bottom-up processes can reveal brand new heterogeneous structures and…

Recently, the two dimensional (2D) materials have become a potential candidates for various technological applications in spintronics and optoelectronics. In the present study, the structural, electronic, and phase stability of 2D layered…

Oxides with good p-type conductivity have been long sought after to achieve high performance all-oxide optoelectronic devices. Divalent Sn(II) based oxides are promising candidates because of their rather dispersive upper valence bands…

材料科学 · 物理学 2016-05-27 Yuwei Li , David J. Singh , Mao-Hua Du , Qiaoling Xu , Lijun Zhang , Weitao Zhengd , Yanming Ma

Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an…

介观与纳米尺度物理 · 物理学 2018-12-20 S. Schmult , S. Wirth , V. V. Solovyev , R. Hentschel , A. Wachowiak , A. Großer , I. V. Kukushkin , T. Mikolajick

Nanoporous graphene (NPG), consisting of ordered arrays of nanopores separated by graphene nanoribbons was recently realized using a bottom-up synthesis method (Science 360(2018), 199). In this work we accordingly explored the mechanical…

介观与纳米尺度物理 · 物理学 2019-03-12 Bohayra Mortazavi , Mohamed E. Madjet , Masoud Shahrokhi , Said Ahzi , Xiaoying Zhuang , Timon Rabczuk

Two-dimensional (2D) transition metal nitrides (TMNs) are new members in the 2D materials family with a wide range of applications. Particularly, highly crystalline and large area thin films of TMNs are potentially promising for…

材料科学 · 物理学 2019-10-07 Jun Cao , Tianshu Li , Hongze Gao , Yuxuan Lin , Xingzhi Wang , Haozhe Wang , Tomás Palacios , Xi Ling

Two-dimensional (2D) metallic systems with intrinsically low lattice thermal conductivity are rare, yet they are of great interest for next-generation energy and electronic technologies. Here, we present a comprehensive first-principles…

Recently, a new carbon 3D carbon allotrope named pentadiamond was proposed. Pentadiamond is composed of carbon atoms in mixed sp$^2$ and sp$^3$-like hybridization. In this work, we have carried out a detailed investigation of the electronic…

材料科学 · 物理学 2021-02-03 Raphael M. Tromer , Levy C. Felix , Cristiano F. Woellner , Douglas S. Galvao

Two-dimensional (2D) nitride materials such as hexagonal boron nitride (h-BN), graphitic carbon nitride (g-C$_3$N$_4$), and beryllonitrene (BeN$_4$) have emerged as promising candidates for next generation electronic, optoelectronic, and…

材料科学 · 物理学 2025-10-16 Shreya G. Sarkar , Kuneh Parag Shah , Brahmananda Chakraborty