相关论文: Enhanced photovoltaic effect in graphene-silicon S…
The design of efficient graphene-silicon (GSi) Schottky junction photodetectors requires detailed understanding of the spatial origin of the photoresponse. Scanning-photocurrent-microscopy (SPM) studies have been carried out in the visible…
We report the fabrication and photovoltaic performance of a rotationally faulted multilayer graphene (rf-MLG)/n-Si Schottky junction device. A thickness-controlled rf-MLG is synthesized using a 5 {\mu}m Ni foil catalyst via the chemical…
We theoretically study the efficiency limits and performance characteristics of few-layer graphene-semiconductor solar cells (FGSCs) based on a Schottky contact device structure. We model and compare the energy conversion efficiency of…
Atomically thin layered materials such as graphene and transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their high carrier-transporting properties and strong light-matter…
We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si…
Transition metal dichalcogenide (TMD) materials have emerged as promising candidates for thin film solar cells due to their wide bandgap range across the visible wavelengths, high absorption coefficient and ease of integration with both…
A graphene layer on top of a dielectric can dramatically influence ability of the material to radiative heat transfer. This property of graphene is used to improve the performance and reduce costs of near-field thermophotovoltaic cells.…
We demonstrate single layer graphene/n-Si Schottky junction solar cells that under AM1.5 illumination exhibit a power conversion efficiency (PCE) of 8.6%. This performance, achieved by doping the graphene with…
Numerous studies have reported performance enhancement of a thermophotovoltaic (TPV) system when an emitter is separated by nanoscale gaps from a TPV cell. Although a $p$-$n$-junction-based TPV cell has been widely used for the near-field…
We present a clear signature of the Schottky effect in a RF photoinjector using photons with energy lower than the Mg cathode work function. This signature is manifested by the shift in the RF phase angle for the onset of the detection of…
We develop a simple and scalable graphene patterning method using electron-beam or ultraviolet lithography followed by a lift-off process. This method, with the merits of: high pattern resolution and high alignment accuracy, free from…
We have demonstrated a simple and accurate method for characterizing the capacitance of Graphene/n-Si Schottky junction solar cells (GSSCs) which embed the metal-oxide-semiconductor (MOS) capacitor. We measured two types of GSSCs, one with…
Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical…
Graphene-silicon (GS) Schottky junctions have been demonstrated as an efficient architecture for photodetection. However, the response speed of such devices for free space light detection has so far been limited to 10's-100's of kHz for…
Graphene has shown great application opportunities in future nanoelectronic devices due to its outstanding electronic properties. Moreover, its impressive optical properties have been attracting the interest of researchers, and, recently,…
Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with…
The effect of chemical doping of graphene films on the photovoltaic properties of the graphene/silicon Schottky junction solar cells was investigated. Thionyl chloride modification greatly enhanced the conductivity of graphene film,…
Graphene-Silicon Schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating speeds. Various routes and architectures have been employed…
Energy harvesting from shadow-effect is the generation of electrical power from a Schottky junction when a part of it is kept in shadow and the remaining under illumination. It has been recently invented in Au/n-Si junctions, where…
We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, respectively. We demonstrate record photo responsivity,…