相关论文: Optical Switching in Tb/Co-Multilayer Based Nanosc…
The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited…
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…
Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible…
Strain-controlled modulation of the magnetic switching behavior in magnetic tunnel junctions (MTJs) could provide the energy efficiency needed to accelerate the use of MTJs in memory, logic, and neuromorphic computing, as well as an…
There is growing interest in exploring nanomagnetic devices as potential replacements for electronic devices (e.g. transistors) in digital switching circuits and systems. A special class of nanomagnetic devices are switched with…
Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that consists of the MTJ and a transistor requires reversable…
Manipulation of magnetization with ultrashort laser pulses is promising for information storage device applications. The dynamic of the magnetization response depends on the energy transfer from the photons to the spins during the initial…
Synaptic memory is considered to be the main element responsible for learning and cognition in humans. Although traditionally non-volatile long-term plasticity changes have been implemented in nanoelectronic synapses for neuromorphic…
Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of…
Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes separated by an insulating barrier layer. Their key functional…
In this work, we propose helicity-dependent switching (HDS) of magnetization of Co/Pt for energy efficient optical receiver. Designing a low power optical receiver for optical-to-electrical signal conversion has proven to be very…
Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…
Magnetic tunnel junctions are nanoscale devices which have recently attracted interested in the context of frequency multiplexed spintronic neural networks, due to their interesting dynamical properties, which are defined during the…
Voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a writing technique for voltage-controlled magnetoresistive random access memory (VCMRAM), which is expected to be an ultimate non-volatile memory with ultra-low power…
The ultimate control of magnetic states of matter at femtosecond (or even faster) timescales defines one of the most pursued paradigm shifts for future information technology. In this context, ultrafast laser pulses developed into extremely…
Magnetic tunnel junctions (MTJs) are key elements in practical spintronics, enabling not only conventional tasks such as data storage, transmission, and processing but also the implementation of compute-in-memory processing elements,…
We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and…
We investigate the stochastic dynamics of nanoscale perpendicular magnetic tunnel junctions (pMTJs) and the correlations that arise when they are electrically coupled. Individual junctions exhibit thermally activated spin-transfer torque…
We demonstrate that the magnetization reversal in a ferromagnetic Pt/Co/Pt stack can be induced by a single femtosecond laser pulse. We find that the size of the switched spot is comparable to the size of the intrinsic magnetic domains. It…
A prototype of magnetoresistive random access memory (MRAM) based on magnetic tunnel junctions (MTJ) was fabricated with crossed-anisotropy of magnetic layers on either side of the tunnelling barrier layer. It is demonstrated that the…