相关论文: Optical Switching in Tb/Co-Multilayer Based Nanosc…

Altermagnets demonstrate significant potential in spintronics due to their unique non-relativistic spin-splitting properties, yet altermagnetic devices still face challenges in efficiently switching logic states. Here, we report…

Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here we directly demonstrate the usefulness of this strategy by fabricating…

This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the…

Analog electronic non-volatile memories mimicking synaptic operations are being explored for the implementation of neuromorphic computing systems. Compound synapses consisting of ensembles of stochastic binary elements are alternatives to…

Depinning of nanoscale magnetic textures, such as domain walls, vortices and skyrmions, is of paramount importance for magnetic storage and information processing. We measure time-resolved magnetic switching statistics of an individual,…

Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antiferromagnetic (AFM) compounds can significantly increase…

Topological spin textures such as magnetic skyrmions hold considerable promise as robust, nanometre-scale, mobile bits for sustainable computing. A longstanding roadblock to unleashing their potential is the absence of a device enabling…

Although all-optical magnetization switching with fs laser pulses has garnered much technological interest, the ultimate data rates achievable have scarcely been investigated. Recently it has been shown that after a switching event in a…

Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-efficient Logic-in-Memory (LIM) architectures based on non-volatile resistive memory devices. The SIMPLY logic is enabled by adding a comparator…

We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect,…

We present an ultrafast route for a controlled, toggle switching of magnetic vortex cores with ultrashort unipolar magnetic field pulses. The switching process is found to be largely insensitive to extrinsic parameters, like sample size and…

A superconducting magnetometers based on the magnetic field dependence of the Eck step voltage in long Josephson tunnel junctions (LJTJs) is demonstrated. The field to be measured is applied perpendicular to a continuous superconducting…

This paper describes a robust, modular, and physics- based circuit framework to model conventional and emerging Magnetic Tunnel Junction (MTJ) devices. Magnetization dynamics are described by the stochastic Landau-Lifshitz-Gilbert (sLLG)…

Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field…

We report on the magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth…

Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high…

One of the biggest challenges the current STT-RAM industry faces is maintaining a high thermal stability while trying to switch within a given voltage pulse and energy cost. In this paper, we present a physics based analytical model that…

The impact of 400 keV $Ar^+$ ion irradiation on the magnetic and electrical properties of in-plane magnetized magnetic tunnel junction (MTJ) stacks was investigated by ferromagnetic resonance, vibrating sample magnetometry and…

It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tunnel magnetoresistance (TMR). To explore the essential…

We present an electron holography experiment enabling the local and quantitative study of magnetic properties in magnetic tunnel junction. The junction was fully characterized during the switching process and each possible magnetic…