相关论文: Chirality-induced intrinsic charge rectification i…
The hallmark of two-dimensional chiral topological phases is the existence of anomalous gapless modes at the spatial boundary. Yet, the manifestation of this edge anomaly within the bulk ground-state wavefunction itself remains only…
A triangular lattice with onsite Coulomb interaction $U$ present only on one sub-lattice, is periodically driven by electromagnetic field with a frequency $\Omega \gg (t,~U)$ at half filling. In this high frequency limit, the…
We propose a bilayer all-dielectric PhC for controlling Janus bound states in the continuum (BIC) and optical chirality through symmetry-selective perturbations. Starting from a symmetry-protected $\Gamma$-point BIC, we use interlayer…
Electric gating can strongly modulate a wide variety of physical properties in semiconductors and insulators, such as significant changes of conductivity in silicon, appearance of superconductivity in SrTiO3, the paramagnet-ferromagnet…
Magneto conductivities in Weyl semimetals (WSM) in presence of small fields are studied using quasi-classical Boltzmann transport equations (BTE). Following such formalism here we consider irradiation via circularly polarized light on a…
A quantum anomalous Hall state with high Chern number has so far been realized in multiplayer structures consisting of alternating magnetic and undoped topological insulator layers. However, in previous proposals, the Chern number can be…
For the first time, time-dependent internal charge amplification through impact ionization has been observed in a planar germanium (Ge) detector operated at cryogenic temperature. In a time period of 30 and 45 minutes after applying a bias…
The nodal points in a Weyl semimetal are generally considered as the causes of the chiral anomaly and the chiral magnetic effect (CME). Employing a linear-response analysis of a two-band lattice model, we show that the Weyl nodes and thus…
We show that electron-hole correlation can be used to tune interband and intraband optical transition rates in semiconductor nanostructures with at least one weakly confined direction. The valence-to-conduction band transition rate can be…
As a methodology for controlling the carrier transport of topological insulators (TI's), a flexible tuning in carrier number on the surface states (SS's) of three dimensional TI's by surface modifications using organic molecules is…
We propose a tilt-assisted chirality Hall effect in the normal metal-superconductor (NS) junctions based on the time-reversal broken type-I Weyl semimetals. It is found that the chirality-contrasting skew reflection occurs at the NS…
Even if Weyl semimetals are characterized by quasiparticles with well-defined chirality, exploiting this experimentally is severely hampered by Weyl lattice-fermions coming in pairs with opposite chirality, typically causing the net…
In orbital Chern insulators, the chemical potential acts as a tuning knob to reverse chirality in dissipationless edge currents, enabling electric-field control of magnetic order-key for future quantum electronics. Despite the rise of…
We investigate the use of Berry curvature dipole in $n$-doped Tellurium as a mechanism for achieving terahertz amplification and lasing by applying a DC electric field. When the electrical bias and wave vector are aligned along the trigonal…
We discuss the mechanism responsible for the observed improvement in the structural properties of In doped GaSe, a layered material of great current interest. Formation energy calculations show that by tuning the Fermi energy, In can…
We derive diffusion equations, which describe spin-charge coupled transport on the helical metal surface of a three-dimensional topological insulator. The main feature of these equations is a large magnitude of the spin-charge coupling,…
Elemental substitution is a proven method of Fermi level tuning in topological insulators, which is needed for device applications. Through static and time resolved photoemission, we show that in MnBi$_2$Te$_4$, elemental substitution of Bi…
Topological insulators (TIs) host unusual surface states with Dirac dispersion and helical spin texture and hold high potentials for novel applications in spintronics and quantum computing. Control of the chemical potential in these…
Gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology node. In particular, the junctionless nanowire transistors…
Injection-type ballistic rectifiers on Si/SiGe are studied with respect to the influence of gate voltage on the transfer resistance RT (output voltage divided by input current) for different positions of a local gate electrode. The…