相关论文: Picosecond Time-Scale Resistive Switching Monitore…
Optical switches and bifurcation rely on the nonlinear response of materials. Here, we demonstrate linear temporal bifurcation responses in a passive multimode microresonator, with strongly coupled chaotic and whispering gallery modes or…
Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and subsequent non-integer conductance (in terms of conductance…
Numerical simulation of switching process of high-voltage silicon photodiodes, phototransistors and photothyristors those triggered-on homogeneously over the area by picosecond laser pulses, has been performed for the first time. The…
The memristor, because of its controllability over a wide dynamic range of resistance, has emerged as a promising device for data storage and analog computation. A major challenge is the accurate measurement of memristance over a wide…
Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity…
Using memristive properties common for the titanium dioxide thin film devices, we designed a simple write algorithm to tune device conductance at a specific bias point to 1% relative accuracy (which is roughly equivalent to 7-bit precision)…
We report the direct observation of the electric pulse induced resistance-change (EPIR) effect at the nano scale on La1-xSrxMnO3 (LSMO) thin films by the current measurement AFM technique. After a switching voltage of one polarity is…
Picosecond switching of the staggered antiferromagnetic order is shown to be realizable through spin-transfer torques from a short current pulse. The coupled dynamics of sublattice magnetization is mapped onto a classical pendulum subject…
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching…
Memristive devices have been considered promising candidates for nature-inspired computing and in-memory information processing. However, experimental devices developed to date typically show significant variability and function at…
The recent co-optimization of memristive technologies and programming algorithms enabled neural networks training with in-memory computing systems. In this context, novel analog filamentary conductive-metal-oxide (CMO)/HfOx redox-based…
We report pulsed as well as direct current/voltage induced electroresistance in Bi0.8Sr0.2MnO3 at room temperature. It is shown that bi-level and multi-level resistivity switching can be induced by a sequence of pulses of varying pulse…
Reasoned by its dynamical behavior, the memristor enables a lot of new applications in analog circuit design. Since some realizations are shown (e.g. 2007 by Hewlett Packard), the development of applications with memristors becomes more and…
The functionality of logic and memory elements in current electronics is based on multi-stability, driven either by manipulating local concentrations of electrons in transistors, or by switching between equivalent states of a material with…
A new mechanism for memristive switching in 2D materials is through electric-field controllable electronic/structural phase transitions, but these devices have not outperformed status quo 2D memristors. Here, we report a high-performance…
We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called…
Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attributed to the formation and dissolution of conductive filaments…
Controllable quantized conductance states of TiN/Ti/HfO$_x$/TiN memristors are realized with great precision through a pulse-mode reset procedure, assisted with analytical differentiation of the condition of the set procedure, which…
Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching…
Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses.…