相关论文: Picosecond Time-Scale Resistive Switching Monitore…
The field of spintronics involves the study of both spin and charge transport in solid state devices with a view toward increasing their functionality and efficiency. Alternatively, the field of ultrafast magnetism focuses on the use of…
Real-time detection of moving objects involves memorisation of features in the template image and their comparison with those in the test image. At high sampling rates, such techniques face the problems of high algorithmic complexity and…
Spin-transfer magnetic random access memory is of significant interest for cryogenic applications where a persistent, fast, low-energy consumption and high device density is needed. Here we report the low-temperature nanosecond duration…
The physics underlying reset in bipolar resistive memory has been the subject of decades of controversy and has been identified as the primary barrier to resistive memory technology development. This manuscript introduces a nanoscale effect…
Memristors are among the most promising elements for modern microelectronics, having unique properties such as quasi-continuous change of conductance and long-term storage of resistive states. However, identifying the physical mechanisms of…
Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit…
Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors…
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…
Scaling down materials to an atomic-layer level produces rich physical and chemical properties as exemplified in various two-dimensional (2D) crystals extending from graphene, transition metal dichalcogenides to black phosphorous. This is…
HfO2-based ferroelectric films have attracted considerable attention as their nanoscale ferroelectricity and compatibility with cmos technology, fulfilling demands of emerging memory technologies. However, as films scale down,…
The translation of emerging application concepts that exploit Resistive Random Access Memory (ReRAM) into large-scale practical systems requires realistic, yet computationally efficient, empirical models that can capture all observed…
Critical temperature regions for resistive switching were found based on HfAlO resistive switching memory. From 5 K to 300 K, the resistive switching appears at 60 K, and then a reversible bipolar switching between the two states is…
High-speed, non-volatile tunability is critical for advancing reconfigurable photonic devices used in neuromorphic information processing, sensing, and communication. Despite significant progress in developing phase change and ferroelectric…
Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers…
We present an ultrafast route for a controlled, toggle switching of magnetic vortex cores with ultrashort unipolar magnetic field pulses. The switching process is found to be largely insensitive to extrinsic parameters, like sample size and…
Phase change memory (PCM) relies on a reversible transition between amorphous and crystalline states of a material, and stands as a promising candidate for next-generation, energy-efficient data storage and neuromorphic hardware. Here, we…
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…
With the broad recent research on ferroelectric hafnium oxide for non-volatile memory technology, depolarization effects in HfO2-based ferroelectric devices gained a lot of interest. Understanding the physical mechanisms regulating the…
Ultrafast electrical switching by current-induced staggered spin-orbit fields, with minimal risk of overshoot, is shown in layered easy-plane antiferromagnets with basal-plane biaxial anisotropy. The reliable switching is due to the…
The ferroelectric switching speed has been experimentally obfuscated by the interaction between the measurement circuit and the ferroelectric switching itself. This has prohibited the observation of real material responses at nanosecond…