相关论文: Evidence of boron pairs in highly boron laser dope…
Superconducting boron-doped silicon films prepared by gas immersion laser doping (GILD) technique are analyzed by atom probe tomography. The resulting three-dimensional chemical composition reveals that boron atoms are incorporated into…
Diamond, a wide band-gap semiconductor, can be engineered to exhibit superconductivity when doped heavily with boron. The phenomena has been demonstrated in samples grown by chemical vapour deposition where the boron concentration exceeds…
We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentration cB has been varied up to approx. 10 at.% by increasing the…
Crystalline Si substrates are doped by laser annealing of solution processed Si. For this experiment, dispersions of highly B-doped Si nanoparticles (NPs) are deposited onto intrinsic Si and laser processed using an 807.5nm cw-laser. During…
Hyperdoping, overcoming the solubility limit of dopants in a crystalline semiconductor, is a fertile method for the enhancement of the electrical, structural and optical devices' performances and for the exploration of exotic phases such as…
We show that the optical and electronic properties of nanocrystalline silicon can be efficiently tuned using impurity doping. In particular, we give evidence, by means of ab-initio calculations, that by properly controlling the doping with…
Atomic force microscopy and second-harmonic generation data show that boron doping enhances the rate of oxidation of H-terminated silicon. Holes cause a greater increase in the reactivity of the Si-H up bonds than that of the Si-Si back…
The crystal structure of boron doped superconducting MgC_{1-x}{11}^B_{x}Ni_{3}, studied by powder neutron diffraction, is reported. The solubility limit of boron is determined to be approximately x=0.16. The unit cell expands from a =…
Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high…
We study within a first-principle approach the band structure, vibrational modes and electron-phonon coupling in boron, aluminum and phosphorus doped silicon in the diamond phase. Our results provide evidences that the recently discovered…
In this paper, theoretical and numerical analyses are conducted of the profiles of the planar (-110) crystallographic direction in the diamond layer doped with boron atoms. The planar profiles for periodic doping following several ideal…
Nanoscale silicon p(+)-n junctions with very high concentration of boron, 5 10^21 cm-3, are found to demonstrate interesting optical properties. Emission band dominated in near-infrared electroluminescence (EL) spectra possesses high degree…
The effect of doping of cubic boron nitride with beryllium, silicon, sulfur and magnesium on the lattice parameters, electrical conductivity and EPR spectra has been studied. It is established that the degree of doping increases…
The electronic properties of boron-nitride nanoribbons (BNNRs) doped with a line of carbon atoms are investigated by using density functional calculations. Three different configurations are possible: the carbon atoms may replace a line of…
The doping of graphene to tune its electronic structure is essential for its further use in carbon based electronics. Adapting strategies from classical silicon based semiconductor technology, we use the incorporation of heteroatoms in the…
Boron-doped diamond undergoes an insulator-metal transition at some critical value (around 2.21 at %) of the dopand concentration. Here, we report a simple method for the calculation of its bulk modulus, based on the thermodynamical model,…
Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$…
Black silicon (BSi) is a synthetic nanomaterial with high aspect ratio nano protrusions inducing several interesting properties such as a very large absorptivity of incident radiation. We have recently shown that heavily doping the BSi in…
Boron-doped diamond crystals (BDD, C$_{1-x}$B$_{x}$) exhibit exceptional mechanical strength, electronic tunability, and resistance to radiation damage. This makes them promising materials for use in gamma-ray crystal-based light sources.…
Different phases of solid boron under high pressure are studied by first principles calculations. The $\alpha$-B$_{12}$ structure is found to be stable up to 270 GPa. Its semiconductor band gap (1.72 eV) decreases continuously to zero…