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相关论文: Interface effects on titanium growth on graphene

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We present a systematical study via scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED) on the effect of the exposure of Lithium (Li) on graphene on silicon carbide (SiC). We have investigated Li deposition both…

材料科学 · 物理学 2017-09-29 Sara Fiori , Yuya Murata , Stefano Veronesi , Antonio Rossi , Camilla Coletti , Stefan Heun

The mechanical integrity of composite materials depends primarily on the interface strength and the defect density of the reinforcement which is the provider of enhanced strength and stiffness. In the case of graphene/ polymer…

Graphene forms from a relatively dense, tightly-bound C-adatom gas, when elemental C is deposited on or segregates to the Ru(0001) surface. Nonlinearity of the graphene growth rate with C adatom density suggests that growth proceeds by…

材料科学 · 物理学 2010-12-14 E. Loginova , N. C. Bartelt , P. J. Feibelman , K. F. McCarty

Epitaxial growth of graphene on transition metal substrates is an important route for obtaining large scale graphene. However, the interaction between graphene and the substrate often leads to multiple orientations, distorted graphene band…

We perform density functional theory calculations for the determination of the structural and electronic properties of epitaxial graphene on 4H-SiC(000$\bar{1}$). Using commensurate supercells that minimize non-physical stresses we show…

介观与纳米尺度物理 · 物理学 2011-03-07 I. Deretzis , A. La Magna

Confinement epitaxy beneath graphene stabilizes exotic material phases by restricting vertical growth and altering lateral diffusion, conditions unattainable on bare substrates. However, achieving long-range interfacial order while…

介观与纳米尺度物理 · 物理学 2026-02-19 Zamin Mamiyev , Niclas Tilgner , Narmina O. Balayeva , Dietrich R. T. Zahn , Thomas Seyller , Christoph Tegenkamp

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are…

The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensive research in applications, such as graphene field-effect…

Graphene is a mechanically robust 2D material promising for flexible optoelectronic applications. However, its electromagnetic properties under strain are experimentally poorly understood. Here we present the far-infrared transmission…

介观与纳米尺度物理 · 物理学 2017-05-22 Manisha Chhikara , Iaroslav Gaponenko , Patrycja Paruch , Alexey. B. Kuzmenko

MXene-based heterostructures have received considerable interest owing to their unique properties. Herein, we examine various heterostructures of a prototypical MXene and graphene using density functional theory. We find that the adhesion…

介观与纳米尺度物理 · 物理学 2019-02-27 Rui Li , Weiwei Sun , Cheng Zhan , Paul R. C. Kent , De-en Jiang

The effect of contact architecture, graphene defect density and metal-semiconductor work function difference on resistivity of metal-graphene contacts have been investigated. An architecture with metal on the bottom of graphene is found to…

材料科学 · 物理学 2016-01-05 Krishna Bharadwaj B , Rudra Pratap , Srinivasan Raghavan

A novel nanoelectronic device is constructed by graphyne that is robustly connected between graphene electrodes, where graphyne is composed of hexagonal carbon rings and carbon chains. Owing to similarities between the bond lengths and unit…

介观与纳米尺度物理 · 物理学 2013-07-17 Young I. Jhon , Myung S. Jhon

We have used low-energy electron microscopy and diffraction to examine the significance of lattice orientation in graphene growth on Cu(001). Individual graphene domains undergo anisotropic growth on the Cu surface, and develop into lens…

材料科学 · 物理学 2014-11-12 Joseph M. Wofford , Shu Nie , Konrad Thürmer , Kevin F. McCarty , Oscar D. Dubon

One- and two-layer graphene have recently been shown to feature new physical phenomena such as unconventional quantum Hall effects and prospects of supporting a non-silicon technological platform using epitaxial graphene. While both one-…

介观与纳米尺度物理 · 物理学 2013-05-29 C. P. Puls , N. E. Staley , Y. Liu

Graphene has shown great application potentials as the host material for next generation electronic devices. However, despite its intriguing properties, one of the biggest hurdles for graphene to be useful as an electronic material is its…

The contact strength, adhesion and friction, between graphene and an incommensurate crystalline substrate such as {\it h}-BN depends on their relative alignment angle $\theta$. The well established Novaco-McTague (NM) theory predicts for a…

材料科学 · 物理学 2017-05-29 Roberto Guerra , Merel van Wijk , Andrea Vanossi , Annalisa Fasolino , Erio Tosatti

Solid-melt interfaces play a pivotal role in governing crystal growth and metal-mediated epitaxy of gallium nitride (GaN) and other semiconductor materials. Using atomistic simulations based on machine-learning interatomic potentials…

We present electronic structure calculations of few-layer epitaxial graphene nanoribbons on SiC(0001). Trough an atomistic description of the graphene layers and the substrate within the extended H\"{u}ckel Theory and real/momentum space…

介观与纳米尺度物理 · 物理学 2009-08-19 I. Deretzis , A. La Magna

Artificial graphene consisting of honeycomb lattices other than the atomic layer of carbon has been shown to exhibit electronic properties similar to real graphene. Here, we reverse the argument to show that transport properties of real…

A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fail to give such an enhancement. Scanning electron microscopy…