相关论文: M-center in low-energy electron irradiated 4H-SiC

We report on the low-energy electron and fast neutron irradiated 4H-SiC studied by deep-level transient spectroscopy (DLTS) and Laplace DLTS. Irradiations introduced two defects, Ec-0.4eV and Ec-0.7eV. They were previously assigned to…

Electrical properties of point defects in 4$H$-SiC have been studied extensively, but those related to carbon interstitials (C$_{i}$) have remained surprisingly elusive until now. Indeed, when introduced via ion irradiation or implantation,…

The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M-center in 4H-SiC, a bistable defect responsible for a family of electron traps, has been deprived of a model which could unveil…

We provide direct evidence that the broad Z$_{1/2}$ peak, commonly observed by conventional DLTS in as-grown and at high concentrations in radiation damaged $4H$-SiC, has two components, namely Z$_{1}$ and Z$_{2}$, with activation energies…

Recent ab initio calculations [Mattausch et al., Phys. Rev. B 70, 235211 (2004)] of carbon clusters in SiC reveal a possible connection between the tricarbon antisite (C_3)_Si and the U photoluminescence center in 6H-SiC [Evans et al.,…

The carbon vacancy in $4H$-SiC is a powerful minority carrier recombination center and a major cause of degradation of SiC-based devices. Despite the extensiveness of the literature regarding the characterization and modeling of the defect,…

The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photoluminescence (PL) spectroscopy. A comprehensive model is…

The electronic, structural and vibrational properties of small carbon interstitial and antisite clusters are investigated by ab initio methods in 3C and 4H-SiC. The defects possess sizable dissociation energies and may be formed via…

The negatively charged silicon vacancy [V$_\text{Si}(-)$] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V$_\text{Si}(-)$ defect possesses $S = 3/2$ spin with long spin coherence time and can be…

When annealing a 4H silicon carbide (SiC) crystal, a sequence of optically active defect centers occurs among which the TS center is a prominent example. Here, we present low-temperature photoluminescence analyses on the single defect…

Elucidating the significance of low-energy electrons in the rupture of DNA/RNA and the process involved in it is crucial in the field of radiation therapy. Capturing of the incident electron in one of the empty molecular orbitals and the…

Future hadron collider experiments will require sensing materials that withstand stronger radiation fields. Therefore, either a frequent replacement of detectors, a significant increase in radiation hardness of Silicon, or a shift to…

SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO$_2$ interface degrade the ideal behavior of…

The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from…

Deeply-inelastic scattering (DIS) stands to enter a golden age with the prospect of precision programs at the Electron-Ion Collider (EIC) and Large Hadron-electron Collider (LHeC). While these programs will be of considerable importance to…

Silicon Carbide (SiC) demonstrates significant potential for high-energy particle detection in complex radiation environments due to its exceptional radiation resistance, excellent environmental adaptability, and fast response time.…

We report an experimental study by electron paramagnetic resonance (EPR) of gamma ray irradiation induced point defects in oxygen deficient amorphous SiO2 materials. We have found that three intrinsic (E'gamma, E'delta and triplet) and one…

A technique for measuring high-energy electrons using Si detectors of various thicknesses that are much smaller than the range of the examined electrons is presented. The advantages of the method are discussed on the basis of…

The Standard Model of particle physics is extremely well tested and yet is not believed to be a theory of everything. Many extensions of the Standard Model predict the existence of new particles. The Large Hadron Collider (LHC) is a high…

We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbour silicon and carbon vacancies. The quenching occurs only when the PL is excited below certain photon energies…