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Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful…

介观与纳米尺度物理 · 物理学 2021-01-15 Peiliang Zhao , Jin Yu , H. Zhong , Malt. Rosner , Mikhail I. Katsnelson , Shengjun Yuan

Modulating electronic structure of monolayer transition metal dichalcogenides (TMDCs) is important for many applications and doping is an effective way towards this goal, yet is challenging to control. Here we report the in-situ…

Using first principle calculations, we examine the sequence of phases in electron doped dichalcogenides, such as recently realized in field-gated MoS$_2$. Upon increasing the electron doping level, we observe a succession of semiconducting,…

材料科学 · 物理学 2014-12-10 M. Rösner , S. Haas , T. O. Wehling

Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity and topological properties. Their physical properties can be controlled by doping in electric…

In strongly correlated transition metal dichalcogenides, an intricate interplay of polaronic distortions, stacking arrangement, and electronic correlations determines the nature of the insulating state. Here, we study the response of the…

Mono- and few-layer transition-metal dichalcogenides (TMDCs) provide opportunities for ideal two-dimensional semiconductors for electronic and optoelectronic devices. For electronic devices on TMDCs, it is essential to incorporate n- and/or…

材料科学 · 物理学 2019-08-14 Sehoon Oh , June Yeong Lim , Seongil Im , Hyoung Joon Choi

We investigate how field-effect doping affects the structural properties, the electronic structure and the Hall coefficient of few-layers transition metal dichalcogenides by using density-functional theory. We consider mono-, bi-, and…

介观与纳米尺度物理 · 物理学 2015-05-05 Thomas Brumme , Matteo Calandra , Francesco Mauri

Chemical substitution is a promising route for the exploration of a rich variety of doping- and/or disorder-dependent collective phenomena in low-dimensional quantum materials. Here we show that transition metal dichalcogenide alloys are…

超导电性 · 物理学 2023-06-16 Wen Wan , Rishav Harsh , Paul Dreher , Fernando de Juan , Miguel M. Ugeda

We have developed a simple and straightforward way to realize controlled post-doping towards 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic energy dopant beams and a high-flux chalcogen beam at the same time,…

Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the…

超导电性 · 物理学 2016-08-31 Xiaoxiang Xi , Helmuth Berger , László Forró , Jie Shan , Kin Fai Mak

High-temperature superconductors at zero doping can be considered strongly correlated two-dimensional Mott insulators. The understanding of the connection between the superconductor and the Mott insulator hits at the heart of the…

强关联电子 · 物理学 2009-05-30 M. Civelli

Two-dimensional materials (2DM) have attracted much interest due to their distinct optical, electronic, and catalytic properties. These properties can be by tuned a range of methods including substitutional doping or, as recently…

Electron doping is an excellent tuning knob to explore different phases of matter in two-dimensional (2D) materials. For example, tuning the Fermi level at a van Hove singularity in twisted bilayer graphene can enhance electron-electron…

介观与纳米尺度物理 · 物理学 2024-05-24 Aitor Garcia-Ruiz , Ming-Hao Liu

We investigate the superconducting properties of molybdenum disulphide (MoS$_2$) monolayer across a broad doping range, successfully recreating the so far unresolved superconducting dome. Our first-principles findings reveal several…

超导电性 · 物理学 2024-12-05 Nina Girotto Erhardt , Jan Berges , Samuel Poncé , Dino Novko

Much effort has been made to modify the properties of transition metal dichalcogenide layers via their environment as a route to new functionalization. However, it remains a challenge to induce large electronic changes without chemically…

Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their…

材料科学 · 物理学 2024-10-11 Raagya Arora , Ariel R. Barr , Daniel T. Larson , Michele Pizzochero , Efthimios Kaxiras

In this work, we study the electronic properties of monolayer transition metal dichalcogenide materials subjected to aliovalent doping, using Nb-doped WS2 as an exemplar. Scanning transmission electron microscopy imaging of the as-grown…

材料科学 · 物理学 2021-06-16 Siow Mean Loh , Xue Xia , Neil R. Wilson , Nicholas D. M. Hine

Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten…

材料科学 · 物理学 2017-11-22 Nicolas Onofrio , David Guzman , Alejandro Strachan

A comprehensive study of the electronic and structural phase transition from 1T` to Td in the bulk Weyl semimetal Mo1-xWxTe2 at different doping concentrations has been carried out using time-of-flight momentum microscopy (including…

Transition metal dichalcogenides (TMDs) are a class of widely studied 2D layered materials which exist in various polymorphs. The 1T' phase of MoTe2 is of prime importance as it has been reported to show quantum spin hall (QSH) behavior…

强关联电子 · 物理学 2021-07-06 Suvodeep Paul , Saheb Karak , Manasi Mandal , Ankita Ram , Sourav Marik , R. P. Singh , Surajit Saha
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