相关论文: Robust Subthermionic Topological Transistor Action…
We fabricated Pt/La0.5Ba0.5MnO3 ultrathin films with integration to the PbZr0.2Ti0.8O3 ferroelectric. Strong Topological Hall Effect can be measured across a wide temperature range, which can be turned on and off corresponding to the…
We find that in a multi-orbital system with intraorbital and interorbital hopping integrals, the Hall conductance exhibits various topological quantum phase transitions (QPTs) induced by on-site orbital polarization: integer quantum Hall…
We report on quantum-interference measurements in top-gated Hall bars of monolayer graphene epitaxially grown on the Si face of SiC, in which the transition from negative to positive magnetoresistance was achieved varying temperature and…
Certain insulating materials with strong spin-orbit coupling can conduct currents along their edges or surfaces. This phenomenon arises from the non-trivial topological properties of the electronic band-structure, and is somewhat similar to…
Topological quantum phase transition in electron gas systems is an enthralling phenomena. This phase transition has a unique property in that it is associated with a quantum phase transition point, which separates different regions with…
Topological materials have drawn increasing attention owing to their rich quantum properties, as highlighted by a large intrinsic anomalous Hall effect (AHE) in Weyl and nodal-line semimetals. However, the practical applications for…
The effects of downfolding a Brillouin zone can open gaps and quench the kinetic energy by flattening bands. Quasiperiodic systems are extreme examples of this process, which leads to new phases and critical eigenstates. We analytically and…
Magnetic topology and its associated emergent phenomena are central to realizing intriguing quantum states and spintronics functionalities. Designing spin textures to achieve strong and distinct electrical responses remains a significant…
Trilayer graphene allows systematic control of its electronic structure through stacking sequence and twist geometry, providing a versatile platform for correlated states. Here we report magnetotransport in alternating twisted trilayer…
The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external…
The recent synthesis of two-dimensional staggered materials opens up burgeoning opportunities to study optical spin-orbit interactions in semiconducting Dirac-like systems. We unveil topological phase transitions in the photonic spin Hall…
The discovery of quantum spin Hall materials with huge bulk gaps in experiment, such as bismuthene, provides a versatile platform for topological devices. We propose a topological quantum dot (QD) device in bismuthene ribbon in which two…
The control of the electronic properties of materials via the vacuum fields of cavity electromagnetic resonators is one of the emerging frontiers of condensed matter physics. We show here that the enhancement of vacuum field fluctuations in…
We engineer topological insulating phases in a fermion-fermion mixture on the honeycomb lattice, without resorting to artificial gauge fields or spin-orbit couplings and considering only local interactions. Essentially, upon integrating out…
Epitaxial bismuthene on SiC(0001) hosts symmetry-protected metallic edge states within a large bulk band gap, establishing it as a promising two-dimensional topological insulator for hightemperature quantum spin Hall (QSH) transport. Here…
Two-dimensional electron systems with spin-orbit coupling in the proximity of a superconductor and a magnetic insulator have recently been considered as promising candidates to realize topological superconducting phases. Here we discuss…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
The notion of a spin field effect transistor, where transistor action is realized by manipulating the spin degree of freedom of charge carriers instead of the charge degree of freedom, has captivated researchers for at least three decades.…
The combination of magnetic symmetries and electronic band topology provides a promising route for realizing topologically nontrivial quasiparticles, and the manipulation of magnetic structures may enable the switching between topological…
Altermagnetism has recently emerged as a third fundamental branch of magnetism, combining the vanishing net magnetization of antiferromagnets with the high-momentum-dependent spin splitting of ferromagnets. This study provides a…