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相关论文: Doped Mott insulator on Penrose tiling

200 篇论文

The evolution from an anomalous metallic phase to a Mott insulator within the two-dimensional Hubbard model is investigated by means of the Cellular Dynamical Mean-Field Theory. We show that the density-driven Mott metal-insulator…

强关联电子 · 物理学 2007-08-15 M. Civelli , M. Capone , S. S. Kancharla , O. Parcollet , G. Kotliar

In this article I give a pedagogical illustration of why the essential problem of high-Tc superconductivity in the cuprates is about how an antiferromagnetically ordered state can be turned into a short-range state by doping. I will start…

超导电性 · 物理学 2011-12-23 Zheng-Yu Weng

Understanding doped Mott insulators is a fundamental goal in condensed matter physics, with relevance to cuprate superconductors and other quantum materials. The doped Hubbard model minimally describes such systems, and has explicated some…

High-temperature superconductivity in cuprates emerges upon doping the parent Mott insulator. Robust signatures of the low-doped electronic state include a Hall carrier density that initially tracks the number of doped holes and the…

For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

强关联电子 · 物理学 2011-08-31 G. Sordi , K. Haule , A. -M. S. Tremblay

We study the ground state of the doped Hubbard model on the honeycomb lattice in the small doping and strongly interacting region. The nature of the ground state by doping holes into the anti-ferromagnetic Mott insulating states on the…

强关联电子 · 物理学 2022-06-28 Mingpu Qin

We study the doping evolution of the electronic structure in the pseudogap state of high-Tc cuprate superconductors, by means of a cluster extension of the dynamical mean-field theory applied to the two-dimensional Hubbard model. The…

强关联电子 · 物理学 2013-11-28 Shiro Sakai , Marcello Civelli

Understanding the doping evolution from a Mott insulator to a superconductor probably holds the key for resolving the mystery of unconventional superconductivity in copper oxides. To elucidate the evolution of the electronic state starting…

超导电性 · 物理学 2023-09-19 Han Li , Zhaohui Wang , Shengtai Fan , Huazhou Li , Huan Yang , Hai-Hu Wen

We investigate the highly incoherent regime of hole-doped 2d Mott-Hubbard insulators at moderately small doping and temperatures T>=0.1J, where J is the exchange coupling. Within an extended dynamical mean-field theory of the t-J model and…

强关联电子 · 物理学 2009-11-10 K. Haule , A. Rosch , J. Kroha , P. Wölfle

We show that the strong coupling physics inherent to the insulating Mott state in 2D leads to a jump in the chemical potential upon doping and the emergence of a pseudogap in the single particle spectrum below a characteristic temperature.…

强关联电子 · 物理学 2009-11-07 Tudor D. Stanescu , Philip Phillips

Recent experiments on cuprates show that as a function of doping, the normal-state specific heat sharply peaks at the doping $\delta^*$, where the pseudogap ends at low temperature. This finding is taken as the thermodynamic signature of a…

强关联电子 · 物理学 2019-09-18 G. Sordi , C. Walsh , P. Sémon , A. -M. S. Tremblay

The path from a Mott insulating phase to high temperature superconductivity encounters a rich set of unconventional phenomena involving the insulator-to-metal transition (IMT) such as emergent electronic orders and pseudogaps that…

We study evolution of metals from Mott insulators in the carrier-doped 2D Hubbard model using a cluster extension of the dynamical mean-field theory. While the conventional metal is simply characterized by the Fermi surface (pole of the…

强关联电子 · 物理学 2009-11-13 Shiro Sakai , Yukitoshi Motome , Masatoshi Imada

Unusual quantum phenomena usually emerge upon doping Mott insulators. Using a combinatorial molecular beam epitaxy system integrated with cryogenic scanning tunneling microscopy, we investigate the electronic structure of a modulation-doped…

强关联电子 · 物理学 2022-06-22 Yan-Ling Xiong , Jia-Qi Guan , Rui-Feng Wang , Can-Li Song , Xu-Cun Ma , Qi-Kun Xue

We study the superconducting state of the hole-doped two-dimensional Hubbard model using Cellular Dynamical Mean Field Theory, with the Lanczos method as impurity solver. In the under-doped regime, we find a natural decomposition of the…

强关联电子 · 物理学 2008-02-04 M. Civelli , M. Capone , A. Georges , K. Haule , O. Parcollet , T. D. Stanescu , G. Kotliar

We present a theory describing the mechanism for the two-dimensional (2D) metal-insulator transition (MIT) in absence of disorder. A two-band Hubbard model is introduced, describing vacancy-interstitial pair excitations within the Wigner…

强关联电子 · 物理学 2008-02-15 S. Pankov , V. Dobrosavljevic

The Hubbard model in the strong-coupling regime is mainly studied by Kondo-lattice theory or 1/d expansion theory, with d the spatial dimensionality. In two dimensions and higher, the ground state within the Hilbert subspace with no order…

强关联电子 · 物理学 2007-07-03 Fusayoshi J. Ohkawa

Identification of the electronic state that appears upon doping a Mott insulator is important to understand the physics of cuprate high-temperature superconductors. Recent scanning tunneling microscopy of cuprates provides evidence that a…

超导电性 · 物理学 2019-01-31 R. Nourafkan , M. Côté , A. - M. S. Tremblay

With high-Tc cuprates in mind, properties of correlated dx2-y2-wave superconducting (SC) and antiferromagnetic (AF) states are studied for the Hubbard (t-t'-U) model on square lattices, using a variational Monte Carlo method. We employ…

超导电性 · 物理学 2012-12-14 Hisatoshi Yokoyama , Masao Ogata , Yukio Tanaka , Kenji Kobayashi , Hiroki Tsuchiura

We present a large-scale combinatorial-diagrammatic computation of high-order contributions to the strong-coupling Kato-Takahashi perturbation series for the Hubbard model in high dimensions. The ground-state energy of the Mott-insulating…

强关联电子 · 物理学 2014-12-31 Martin Paech , Walter Apel , Eva Kalinowski , Eric Jeckelmann