中文
相关论文

相关论文: Doped Mott insulator on Penrose tiling

200 篇论文

We investigate the nature of the insulating phases in a bilayer Hubbard model with intralayer coupling $t$ and interlayer coupling $t_{\perp}$ at large interaction strength $U/t$ and half-filling. We consider a dynamical cluster…

强关联电子 · 物理学 2015-06-17 Hunpyo Lee , Yu-Zhong Zhang , Harald O. Jeschke , Roser Valenti

To clarify the mechanism of recently reported, ambipolar carrier injections into quasi-one-dimensional Mott insulators on which field-effect transistors are fabricated, we employ the one-dimensional Hubbard model attached to a tight-binding…

强关联电子 · 物理学 2007-05-23 Kenji Yonemitsu

The dual-fermion approach offers a way to perform diagrammatic expansion around the dynamical mean-field theory. Using this formalism, the influence of antiferromagnetic fluctuations on the self-energy is taken into account through…

强关联电子 · 物理学 2014-12-22 Junya Otsuki , Hartmut Hafermann , Alexander I. Lichtenstein

The effects of doping on the electronic evolution of the Mott insulating state have been extensively studied in efforts to understand mechanisms of emergent quantum phases of materials. The study of these effects becomes ever more…

Layered doped Mott insulators, such as the cuprates, show unusual temperature dependence of the resistivity. Intriguingly, the resistivity perpendicular to the CuO$_2$ planes, $\rho_c(T)$, shows both metallic ($d\rho_c/dT > 0$) and…

强关联电子 · 物理学 2013-01-11 G. Sordi , P. Sémon , K. Haule , A. -M. S. Tremblay

We study the doping evolution of spin excitations in a 1D Hubbard model and its downfolded spin Hamiltonians, by using exact diagonalization combined with cluster perturbation theory. In all models, we observe hardening (softening) of spin…

Recent quantum-gas microscopy of ultracold atoms and scanning tunneling microscopy of the cuprates reveal new detailed information about doped Mott antiferromagnets, which can be compared with calculations. Using cellular dynamical…

强关联电子 · 物理学 2017-12-27 L. Fratino , M. Charlebois , P. Sémon , G. Sordi , A. -M. S. Tremblay

The physics of doped Mott insulators is at the heart of strongly correlated materials and is believed to constitute an essential ingredient for high-temperature superconductivity. In systems with higher SU(N) spin symmetries, even richer…

We study the relationship between the pseudogap and Fermi-surface topology in the two-dimensional Hubbard model by means of the cellular dynamical mean-field theory. We find two possible mean-field metallic solutions on a broad range of…

强关联电子 · 物理学 2018-02-12 Helena Braganca , Shiro Sakai , M. C. O. Aguiar , Marcello Civelli

In this paper we explore the incommensurate spatial modulation of spin-spin correlations as the intrinsic property of the doped Mott insulator, described by the $t-J$ model. We show that such an incommensurability is a direct manifestation…

强关联电子 · 物理学 2009-10-31 Z. Y. Weng , D. N. Sheng , C. S. Ting

Unconventional superconductivity on a honeycomb lattice has received increasing interest since the discovery of graphene primarily due to the similarities between materials with a honeycomb lattice and cuprate superconductors. Many…

超导电性 · 物理学 2023-12-05 Yu Lan , Xian-Feng Yu , Li-Ting Zhang

We study a simple model for $f$-electron systems, the three-dimensional periodic Anderson model, in which localized $f$ states hybridize with neighboring $d$ states. The $f$ states have a strong on-site repulsion which suppresses the double…

强关联电子 · 物理学 2009-11-07 Thereza Paiva , Gokhan Esirgen , Richard T. Scalettar , Carey Huscroft , A. K. McMahan

Electronic frustration and strong correlations may lead to large Seebeck coefficients. To understand this physics on general grounds, we compute the thermopower of the one-band Hubbard model on the 3-dimensional fcc lattice over the whole…

强关联电子 · 物理学 2013-10-18 Louis-François Arsenault , B. Sriram Shastry , Patrick Sémon , A. -M. S. Tremblay

The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the…

Strongly correlated materials are expected to feature unconventional transport properties, such that charge, spin, and heat conduction are potentially independent probes of the dynamics. In contrast to charge transport, the measurement of…

We theoretically investigate twisted structures where each layer is composed of a strongly correlated material. In particular, we study a twisted t-J model of cuprate multilayers within the slave-boson mean field theory. This treatment…

超导电性 · 物理学 2022-05-18 Xue-Yang Song , Ya-Hui Zhang , Ashvin Vishwanath

We investigate the properties of the metallic state obtained by photo-doping carriers into a Mott insulator. In a strongly interacting system, these carriers have a long life-time, so that they can dissipate their kinetic energy to a phonon…

强关联电子 · 物理学 2013-03-21 Martin Eckstein , Philipp Werner

We solve the Periodic Anderson model in the Mott-Hubbard regime, using Dynamical Mean Field Theory. Upon electron doping of the Mott insulator, a metal-insulator transition occurs which is qualitatively similar to that of the single band…

强关联电子 · 物理学 2009-11-13 G. Sordi , A. Amaricci , M. J. Rozenberg

The diversities in crystal structures and ways of doping result in extremely diversified phase diagrams for iron-based superconductors. With angle-resolved photoemission spectroscopy (ARPES), we have systematically studied the effects of…

超导电性 · 物理学 2014-09-16 Z. R. Ye , Y. Zhang , F. Chen , M. Xu , J. Jiang , X. H. Niu , C. H. P. Wen , L. Y. Xing , X. C. Wang , C. Q. Jin , B. P. Xie , D. L. Feng

We introduce a valence-bond dynamical mean-field theory of doped Mott insulators. It is based on a minimal cluster of two orbitals, each associated with a different region of momentum space and hybridized to a self-consistent bath. The…

强关联电子 · 物理学 2009-07-28 M. Ferrero , P. S. Cornaglia , L. De Leo , O. Parcollet , G. Kotliar , A. Georges
‹ 上一页 1 8 9 10 下一页 ›