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Inverted HgTe/CdTe quantum wells have been used as a platform for the realization of 2D topological insulators, bulk insulator materials with spin-helical metallic edges states protected by time-reversal symmetry. This work investigates the…

介观与纳米尺度物理 · 物理学 2017-10-11 Dimy Nanclares , Leandro R. F. Lima , Caio H. Lewenkopf , Luis G. G. V. Dias da Silva

Topological insulators represent a new quantum state of matter which is characterized by edge or surface states and an insulating band gap in the bulk. In a two dimensional (2D) system based on the HgTe quantum well (QW) of critical width…

介观与纳米尺度物理 · 物理学 2021-12-01 G. M. Gusev , Z. D. Kvon , D. A. Kozlov , E. B. Olshanetsky , M. V. Entin , N. N. Mikhailov

We investigate the electronic and transport properties of topological and trivial InAs$_{1-x}$Bi$_x$ quantum dots (QDs). By considering the rapid band gap change within valence band anticrossing theory for InAs$_{1-x}$Bi$_x$, we predicted…

介观与纳米尺度物理 · 物理学 2018-12-26 Denis R. Candido , M. E. Flatté , J. Carlos Egues

HgTe quantum wells possess remarkable physical properties as for instance the quantum spin Hall state and the 'single-valley' analog of graphene, depending on their layer thicknesses and barrier composition. However, double HgTe quantum…

介观与纳米尺度物理 · 物理学 2016-08-02 S. S. Krishtopenko , W. Knap , F. Teppe

Varying the quantum-well width in an HgTe/CdTe heterostructure allows to realize normal and inverted semiconducting band structures, making it a prototypical system to study two-dimensional (2D) topological-insulator behavior. We have…

介观与纳米尺度物理 · 物理学 2016-06-22 T. Kernreiter , M. Governale , U. Zülicke

The two-dimensional topological insulator phase has been observed previously in single HgTe-based quantum wells with inverted subband ordering. In double quantum wells (DQWs), coupling between the layers introduces additional degrees of…

介观与纳米尺度物理 · 物理学 2020-07-01 G. M. Gusev , E. B. Olshanetsky , F. G. G. Hernandez , O. E. Raichev , N. N. Mikhailov , S. A. Dvoretsky

We compute the phase diagram of the HgTe/CdTe quantum wells in the 3 dimensional (3D) parameter space of Dirac mass, Fermi level and disorder strength. The phase diagram reveals the Quantum spin-Hall, the metallic and the normal insulating…

无序系统与神经网络 · 物理学 2011-05-16 Emil Prodan

The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and…

介观与纳米尺度物理 · 物理学 2020-12-29 Z. D. Kvon , D. A. Kozlov , E. B. Olshanetsky , G. M. Gusev , N. N. Mikhailov , S. A. Dvoretsky

The experiments in quantum spin Hall insulator candidate materials, such as HgTe/CdTe and InAs/GaSb heterostructures, indicate that in addition to the topologically protected helical edge modes these multilayer heterostructures may also…

介观与纳米尺度物理 · 物理学 2023-01-31 Nguyen Minh Nguyen , Giuseppe Cuono , Rajibul Islam , Carmine Autieri , Timo Hyart , Wojciech Brzezicki

The quantum spin Hall (QSH) effect is the property of a new state of matter which preserves time-reversal, has an energy gap in the bulk, but has topologically robust gapless states at the edge. Recently, it has been shown that HgTe quantum…

介观与纳米尺度物理 · 物理学 2009-11-13 Xi Dai , Taylor L. Hughes , Xiao-Liang Qi , Zhong Fang , Shou-Cheng Zhang

Our experimental studies of electron transport in wide (14 nm) HgTe quantum wells confirm persistence of a two-dimensional topological insulator state reported previously for narrower wells, where it was justified theoretically. Comparison…

介观与纳米尺度物理 · 物理学 2015-06-24 E. B. Olshanetsky , Z. D. Kvon , G. M. Gusev , A. D. Levin , O. E. Raichev , N. N. Mikhailov , S. A. Dvoretsky

The double quantum well systems consisting of two HgTe layers separated by a tunnel-transparent barrier are expected to manifest a variety of phase states including two-dimensional gapless semimetal and two-dimensional topological…

介观与纳米尺度物理 · 物理学 2021-01-14 G. M. Gusev , E. B. Olshanetsky , F. G. G. Hernandez , O. E. Raichev , N. N. Mikhailov , S. A. Dvoretsky

We report on systematic study of transport properties of a 1000-nm HgTe film. Unlike to thinner and strained HgTe films, which are known as high-quality three-dimensional (3D) topological insulators, the film under study is much thicker…

介观与纳米尺度物理 · 物理学 2023-05-19 M. L. Savchenko , D. A. Kozlov , N. N. Mikhailov , S. A. Dvoretsky , Z. D. Kvon

We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing…

We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for…

We study experimentally the transport properties of "inverted" semiconductor HgTe-based quantum well, which is related to the two-dimensional topological insulator, in diffusive transport regime. We perform nonlocal electrical measurements…

介观与纳米尺度物理 · 物理学 2015-05-28 G. M. Gusev , Z. D. Kvon , O. A. Shegai , N. N. Mikhailov , S. A. Dvoretsky , J. C. Portal

The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Recently, a new class of topological insulators has been proposed. These topological insulators have an insulating gap in…

介观与纳米尺度物理 · 物理学 2009-11-13 Markus Koenig , Hartmut Buhmann , Laurens W. Molenkamp , Taylor L. Hughes , Chao-Xing Liu , Xiao-Liang Qi , Shou-Cheng Zhang

We outline here how strong light-matter interaction can be used to induce quantum phase transition between normal and topological phases in two-dimensional topological insulators. We consider the case of a HgTe quantum well, in which band…

介观与纳米尺度物理 · 物理学 2017-11-17 Mehedi Hasan , Dmitry Yudin , Ivan Iorsh , Olle Eriksson , Ivan Shelykh

We present theoretical investigations of pressure and temperature driven phase transitions in HgTe quantum wells grown on CdTe buffer. Using the 8-band \textbf{k$\cdot$p} Hamiltonian we calculate evolution of energy band structure at…

材料科学 · 物理学 2016-12-07 S. S. Krishtopenko , I. Yahniuk , D. B. But , V. I. Gavrilenko , W. Knap , F. Teppe

Quantum spin Hall edge transport in two-dimensional transition-metal dichalcogenides depends on whether their one-dimensional edge channels are preserved under realistic substrates and device boundaries. Here we implement spin-orbit…

介观与纳米尺度物理 · 物理学 2025-08-19 Wei Li , Pier Philipsen , Thomas Brumme , Thomas Heine
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