相关论文: Dresselhaus spin-orbit interaction in the p-AlGaAs…
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where…
The spin-orbit interaction of two-dimensional (2D) electrons in semiconductor quantum wells is usually considered to be determined by the band profile of a heterostructure. In the GaAs/AlGaAs type heterosystems, this interaction consists of…
One-body mechanisms of spin splitting of the energy spectrum of 2D electrons in a one-side doped (001) GaAs/Al$_x$Ga$_{1-x}$As quantum well have been studied theoretically and experimentally. The interfacial spin splitting has been shown to…
Rashba and linear Dresselhaus interactions are believed to yield dominant contribution to the spin splitting of two-dimensional electrons in the quantum wells based on A$_3$B$_5$ compounds. We show that the interfacial spin-orbit…
We investigate the Rashba and Dresselhaus spin-orbit (SO) couplings in GaAs quantum wells in the range of well widths $w$ allowing for a transition of the electron occupancy from one to two subbands. By performing a detailed…
The interplay between Rashba, Dresselhaus and Zeeman interactions in a quantum well submitted to an external magnetic field is studied by means of an accurate analytical solution of the Hamiltonian, including electron-electron interactions…
The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well (QW) structures are extracted from photocurrent measurements on n-type InAs QWs containing a two-dimensional electron…
The spin-orbit interaction of 2D electrons in the quantum wells grown from the III-V semiconductors consists of the two parts with different symmetry: the Bychkov-Rashba and the Dresselhaus terms. The last term is usually attributed to the…
The Dresselhaus spin-orbit interaction (SOI) of a series of two-dimensional electron gases (2DEGs) hosted in GaAs/AlGaAs and InGaAs/GaAs (001) quantum wells (QWs) is measured by monitoring the precession frequency of the spins as a function…
The spin splitting of conduction band electrons in inversion-asymmetric InGaAs/InP quantum wells is studied by Shubnikov-de Haas measurements combining the analysis of beating patterns and coincidence measurements in doubly tilted magnetic…
We consider stationary spin current in a (110)-oriented GaAs-based symmetric quantum well due to a nonlinear response to an external periodic electric field. The model assumed includes the Dresselhaus spin-orbit interaction and the random…
We show that the bulk-inversion-asymmetry-type strain-induced spin-orbit coupling can be used to effectively modify the Dresselhaus spin splitting in (001) GaAs quantum wells with small well width and the resulting spin lifetime can be…
We study the tunability of the spin-orbit interaction in a two-dimensional electron gas with a front and a back gate electrode by monitoring the spin precession frequency of drifting electrons using time-resolved Kerr rotation. The Rashba…
The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are applied to determine the relative strengths of Rashba and Dresselhaus band spin-splitting in (001)-grown GaAs and InAs based two dimensional…
Spin-orbit interaction in semiconductor structures with broken space inversion symmetry leads to spin splitting of electron and hole states even in the absence of magnetic field. We discover that, beyond the Rashba and Dresselhaus…
The spin-orbit interaction and spin-relaxation mechanisms of a shallow InAs quantum well heterostructure are investigated by magnetoconductance measurements as a function of an applied top-gate voltage. The data were fit using the…
We investigate the relationship between the Zeeman interaction and the inversion asymmetry induced spin orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in crossing…
Spin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs quantum wells are measured by means of Hanle effect. Three different spin relaxation times for spins oriented along [110], [1-10] and [001] crystallographic…
We have studied the relevance of spin-orbit coupling to the dispersion 00009 relation of the Larmor resonance observed in inelastic light scattering and electron-spin resonance experiments on GaAs quantum wells. We show that the spin-orbit…
A self-consistent treatment of the spin-Hall effect requires consideration of the spin-orbit coupling and electron-impurity scattering on equal footing. This is done here for the experimentally relevant case of a [110] GaAs quantum well…