English

Nonlinear spin Hall effect in GaAs (110) quantum wells

Materials Science 2015-05-30 v1

Abstract

We consider stationary spin current in a (110)-oriented GaAs-based symmetric quantum well due to a nonlinear response to an external periodic electric field. The model assumed includes the Dresselhaus spin-orbit interaction and the random Rashba spin-orbit coupling. The Dresselhaus term is uniform in the quantum well plane and gives rise to spin splitting of the electron band. The external electric field of frequency ω\omega - in the presence of random Rashba coupling -- leads to virtual spin-flip transitions between spin subbands, generating stationary pure spin current proportional to the square of the field amplitude.

Keywords

Cite

@article{arxiv.1108.1899,
  title  = {Nonlinear spin Hall effect in GaAs (110) quantum wells},
  author = {V. I. Ivanov and V. K. Dugaev and E. Ya. Sherman and J. Barnas},
  journal= {arXiv preprint arXiv:1108.1899},
  year   = {2015}
}

Comments

5 pages, 3 figures

R2 v1 2026-06-21T18:48:13.211Z