中文
相关论文

相关论文: Gate controlled quantum dots in monolayer WSe2

200 篇论文

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined…

介观与纳米尺度物理 · 物理学 2015-10-28 Xiang-Xiang Song , Di Liu , Vahid Mosallanejad , Jie You , Tian-Yi Han , Dian-Teng Chen , Hai-Ou Li , Gang Cao , Ming Xiao , Guang-Can Guo , Guo-Ping Guo

Two-dimensional (2D) materials are a family of layered materials exhibiting rich exotic phenomena, such as valley-contrasting physics. Down to single-particle level, unraveling fundamental physics and potential applications including…

介观与纳米尺度物理 · 物理学 2022-04-18 Fang-Ming Jing , Zhuo-Zhi Zhang , Guo-Quan Qin , Gang Luo , Gang Cao , Hai-Ou Li , Xiang-Xiang Song , Guo-Ping Guo

Spatial confinement and manipulation of charged carriers in semiconducting nanostructures are essential for realizing quantum electronic devices. Gate-defined nanostructures made of two-dimensional (2D) semiconducting transition metal…

介观与纳米尺度物理 · 物理学 2016-10-11 Ke Wang , Takashi Taniguchi , Kenji Watanabe , Philip Kim

Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical…

Two-dimensional transition metal dichalcogenide (2D-TMD) monolayers, which reveal remarkable semiconductor properties, are the subject of active experimental research.Recently it has been shown experimentally that quantum yield in MoS2 and…

材料科学 · 物理学 2020-01-29 Maksym V. Strikha , Anatolii I. Kurchak , Anna N. Morozovska

Dynamic control of conductivity and optical properties via atomic structure changes is of tremendous technological importance in information storage. Energy consumption considerations provide a driving force toward employing thin materials…

材料科学 · 物理学 2016-02-16 Yao Li , Karel-Alexander N. Duerloo , Kerry Wauson , Evan J. Reed

Single-layer transition metal dichalcogenide (TMD) WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band-gap. Due to low doping levels it is intrinsic and shows ambipolar transport. This opens up…

介观与纳米尺度物理 · 物理学 2014-07-18 Adrien Allain , Andras Kis

We report the fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe$_2$. The devices were operated with gates above and below the WSe$_2$ layer to accumulate a hole gas, which for some devices was…

介观与纳米尺度物理 · 物理学 2020-05-27 S. Davari , J. Stacy , A. M. Mercado , J. D. Tull , R. Basnet , K. Pandey , K. Watanabe , T. Taniguchi , J. Hu , H. O. H. Churchill

Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined…

介观与纳米尺度物理 · 物理学 2020-03-04 Gang Luo , Zhuo-Zhi Zhang , Hai-Ou Li , Xiang-Xiang Song , Guang-Wei Deng , Gang Cao , Ming Xiao , Guo-Ping Guo

Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research…

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are prospective materials for quantum devices owing to their inherent 2D confinements. They also provide a platform to realize even lower-dimensional in-plane electron…

介观与纳米尺度物理 · 物理学 2019-12-19 Ziqian Wang , Ruichun Luo , Isaac Johnson , Hamzeh Kashani , Mingwei Chen

We investigate electronic transport through gate-defined quantum dots in molybdenum disulfide MoS$_2$ using an integrated charge detector. We observe a crossover from two weakly coupled single dots to a strongly coupled double quantum dot.…

Semiconductor quantum dots have emerged as promising candidates for implementation of quantum information processing since they allow for a quantum interface between stationary spin qubits and propagating single photons. In the meanwhile,…

介观与纳米尺度物理 · 物理学 2014-11-04 Ajit Srivastava , Meinrad Sidler , Adrien V. Allain , Dominik S. Lembke , Andras Kis , Atac Imamoglu

Transition metal dichalcogenide monolayers such as MoSe2,MoS2 and WSe2 are direct bandgap semiconductors with original optoelectronic and spin-valley properties. Here we report spectrally sharp, spatially localized emission in monolayer…

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…

介观与纳米尺度物理 · 物理学 2013-06-25 Branimir Radisavljevic , Andras Kis

Coulomb interactions among electrons and holes in two-dimensional (2D) semimetals with overlapping valence and conduction bands can give rise to a correlated insulating ground state via exciton formation and condensation. One candidate…

Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices,…

We report the first observation of gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on SiO2/Si substrate. Ni contacted WSe2 monolayer back-gated transistors, under…

Quantum emitters in transition metal dichalcogenides (TMDs) have recently emerged as a promising platform for generating single photons for optical quantum information processing. In this work, we present an approach for deterministically…

The evolution of the physical properties of two-dimensional material from monolayer limit to the bulk reveals unique consequences from dimension confinement and provides a distinct tuning knob for applications. Monolayer 1T'-phase…

‹ 上一页 1 2 3 10 下一页 ›