We report the fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe2. The devices were operated with gates above and below the WSe2 layer to accumulate a hole gas, which for some devices was then selectively depleted to define the dot. Temperature dependence of conductance in the Coulomb blockade regime is consistent with transport through a single level, and excited state transport through the dots was observed at temperatures up to 10 K. For adjacent charge states of a bilayer WSe2 dot, magnetic field dependence of excited state energies was used to estimate g-factors between 0.8 and 2.4 for different states. These devices provide a platform to evaluate valley-spin states in monolayer and bilayer WSe2 for application as qubits.
@article{arxiv.2002.11799,
title = {Gate-defined, Accumulation-mode Quantum Dots in Monolayer and Bilayer WSe$_2$},
author = {S. Davari and J. Stacy and A. M. Mercado and J. D. Tull and R. Basnet and K. Pandey and K. Watanabe and T. Taniguchi and J. Hu and H. O. H. Churchill},
journal= {arXiv preprint arXiv:2002.11799},
year = {2020}
}