Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically and optically, make two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we fabricate devices based on heterostructures of layered 2D materials, in which we realize gate-controlled tungsten diselenide (WSe2) hole quantum dots. We discuss the observed mesoscopic transport features related to the emergence of quantum dots in the WSe2 device channel, and we compare them to a theoretical model.
@article{arxiv.2108.00507,
title = {Gate controlled quantum dots in monolayer WSe2},
author = {Justin Boddison-Chouinard and Alex Bogan and Norman Fong and Kenji Watanabe and Takashi Taniguchi and Sergei Studenikin and Andrew Sachrajda and Marek Korkusinski and Abdulmenaf Altintas and Maciej Bieniek and Pawel Hawrylak and Adina Luican-Mayer and Louis Gaudreau},
journal= {arXiv preprint arXiv:2108.00507},
year = {2021}
}