相关论文: Electrical control of the hole spin qubit in Si an…
We analyze a prototypical particle-in-a-box model for a hole spin qubit. This quantum dot is subjected to static magnetic and electric fields, and to a radio-frequency electric field that drives Rabi oscillations owing to spin-orbit…
The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit…
Hole spin qubits based on germanium (Ge) have strong tunable spin orbit interaction (SOI) and ultrafast qubit operation speed. Here we report that the Rabi frequency (f_Rabi) of a hole spin qubit in a Ge hut wire (HW) double quantum dot…
Hole spins in semiconductor quantum dots can be efficiently manipulated with radio-frequency electric fields owing to the strong spin-orbit interactions in the valence bands. Here we show that the motion of the dot in inhomogeneous strain…
Hole spins in group IV quantum dots are a highly promising way to develop CMOS compatible spin qubits owing to their inherent spin-orbit coupling, which enables fast, coherent, and electrical spin control. However, spin-orbit coupling not…
A key challenge in quantum computation is the implementation of fast and local qubit control while simultaneously maintaining coherence. Qubits based on hole spins offer, through their strong spin-orbit interaction, a way to implement fast…
We propose a setup for universal and electrically controlled quantum information processing with hole spins in Ge/Si core/shell nanowire quantum dots (NW QDs). Single-qubit gates can be driven through electric-dipole-induced spin resonance,…
Strong `spin'-orbit coupled one-dimensional hole gas is achievable in a Ge nanowire in the presence of a strong magnetic field. The strong magnetic field lifts the two-fold degeneracy in the hole subband dispersions, so that the effective…
We study theoretically the low-energy hole states in Si, Ge, and Ge/Si core/shell nanowires (NWs). The NW core in our model has a rectangular cross section, the results for a square cross section are presented in detail. In the case of Ge…
Hole spin qubits in quasi one-dimensional structures are a promising platform for quantum information processing because of the strong spin-orbit interaction (SOI). We present analytical results and discuss device designs that optimize the…
A semiconductor nanowire quantum dot with strong spin-orbit coupling (SOC) can be used to achieve a spin-orbit qubit. In contrast to a spin qubit, the spin-orbit qubit can respond to an external ac electric field, an effect called…
We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor…
Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast,…
Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising…
The squeezing of a Ge planar quantum dot enhances the Rabi frequency of electric dipole spin resonance by several orders of magnitude due to a strong Direct Rashba spin-orbit interaction in such geometries (Bosco et al 2021 Phys. Rev. B 104…
Across leading qubit platforms, a common trade-off persists: increasing coherence comes at the cost of operational speed, reflecting the notion that protecting a qubit from its noisy surroundings also limits control over it. This…
Hole-spin qubits enable fast, all-electrical spin manipulation through electric-dipole spin resonance (EDSR), arising from two microscopic mechanisms rooted in their intrinsically strong spin-orbit interaction. Depending on how the electric…
Silicon hole quantum dots have been the subject of considerable attention thanks to their strong spin-orbit coupling enabling electrical control. The physics of silicon holes is qualitatively different from germanium holes and requires a…
The large spin-orbit coupling in the valence band of group IV semiconductors provides an electric field knob for spin-qubit manipulation. This fact can be exploited with acceptor based qubits. Spin manipulation of holes bound to acceptors…
We study theoretically the low-energy hole states of Ge/Si core/shell nanowires. The low-energy valence band is quasidegenerate, formed by two doublets of different orbital angular momenta, and can be controlled via the relative shell…