Hole spins in semiconductor quantum dots can be efficiently manipulated with radio-frequency electric fields owing to the strong spin-orbit interactions in the valence bands. Here we show that the motion of the dot in inhomogeneous strain fields gives rise to linear Rashba spin-orbit interactions (with spatially dependent spin-orbit lengths) and g-factor modulations that allow for fast Rabi oscillations. Such inhomogeneous strains may build up spontaneously due to process and cool down stress. We discuss spin qubits in Ge/GeSi heterostructures as an illustration. We highlight that Rabi frequencies can be enhanced by one order of magnitude by shear strain gradients as small as 3×10−6 nm−1 within the dots. This underlines that spin in solids can be very sensitive to strains and opens the way for strain engineering in hole spin devices for quantum information and spintronics.
@article{arxiv.2212.03691,
title = {Hole spin driving by strain-induced spin-orbit interactions},
author = {José Carlos Abadillo-Uriel and Esteban A. Rodríguez-Mena and Biel Martinez and Yann-Michel Niquet},
journal= {arXiv preprint arXiv:2212.03691},
year = {2023}
}