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We describe a new possible route to the metal-insulator transition in doped semiconductors such as Si:P or Si:B. We explore the possibility that the loss of metallic transport occurs through Mott localization of electrons into a quantum…

强关联电子 · 物理学 2012-10-15 Andrew C. Potter , Maissam Barkeshli , John McGreevy , T. Senthil

The Mott insulator is the quintessential strongly correlated electronic state. We obtain complete insight into the physics of the two-dimensional Mott insulator by extending the slave-fermion (holon-doublon) description to finite…

Half-metals, featuring ideal 100\% spin polarization, are widely regarded as key materials for spintronic and quantum technologies; however, the half-metallic state is intrinsically fragile, as it relies on a delicate balance of exchange…

材料科学 · 物理学 2026-01-13 San-Dong Guo , Pan Zhou

We use a previously proposed theory for the temperature dependence of tunneling magnetoresistance to shed light on ongoing efforts to optimize spin valves. First we show that a mechanism in which spin valve performance at finite…

介观与纳米尺度物理 · 物理学 2014-09-11 Karin Everschor-Sitte , Matthias Sitte , Allan H. MacDonald

The Mott transition in honeycomb compounds with significant spin-orbit coupling is explored. At finite temperatures we identify a novel semimetallic phase located between a topological insulator and a topological Mott insulator. This…

强关联电子 · 物理学 2022-04-07 Manuel Fernández López , Jaime Merino

We study coherent spin transport through helical edge states of topological insulator tunnel-coupled to metallic leads. We demonstrate that unpolarized incoming electron beam acquires finite polarization after transmission through such a…

介观与纳米尺度物理 · 物理学 2021-11-10 R. A. Niyazov , D. N. Aristov , V. Yu. Kachorovskii

Mott insulators with a half-filled band of electrons on the triangular lattice have been recently studied in a variety of organic compounds. All of these compounds undergo transitions to metallic/superconducting states under moderate…

强关联电子 · 物理学 2008-05-09 Yang Qi , Subir Sachdev

Spin injection from a half-metallic electrode in the presence of thermal spin disorder is analyzed using a combination of random matrix theory, spin-diffusion theory, and explicit simulations for the tight-binding s-d model. It is shown…

材料科学 · 物理学 2012-12-05 K. D. Belashchenko , J. K. Glasbrenner , A. L. Wysocki

Moir\'e heterostructures of transition metal dichalcogenides exhibit Mott-insulating behaviour both at half-filling as well as at fractional fillings, where electronic degrees of freedom form self-organized Wigner crystal states. An open…

强关联电子 · 物理学 2024-01-31 Urban F. P. Seifert , Leon Balents

We establish the nonequilibrium thermal phases of a voltage driven antiferromagnetic Mott insulator in three dimensions, realised at steady state under a voltage bias. Starting from the Keldysh action for the half filled Hubbard model we…

强关联电子 · 物理学 2022-03-01 Arijit Dutta , Pinaki Majumdar

The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still…

强关联电子 · 物理学 2021-01-04 Byoung Hee Moon , Gang Hee Han , Miloš M. Radonjić , Hyunjin Ji , Vladimir Dobrosavljević

We propose a spin valve device based on the interplay of a modulated spin-orbit interaction and a uniform external magnetic field acting on a quantum wire. Half-metal phases, where electrons with only a selected spin polarization exhibit…

强关联电子 · 物理学 2017-12-04 D. C. Cabra , G. L. Rossini , A. Ferraz , G. I. Japaridze , H. Johannesson

Quantum spin Hall (QSH) insulators and Mott insulators are conventionally regarded as distinct insulating phases, arising from band topology and strong Coulomb interactions, respectively. Here, we report the observation of QSH edge…

介观与纳米尺度物理 · 物理学 2026-05-21 Yifei Jin , Yaqi Ma , Aoqian Zhang , Nan Zhang , Ulf Lampe , Ivana Wong , Kenji Watanabe , Takashi Taniguchi , Tze Kin Cheung , Ning Wang , Kaifei Kang

More than half a century after first being proposed by Sir Nevill Mott, the deceptively simple question of whether the interaction-driven electronic metal-insulator transition may be continuous remains enigmatic. Recent experiments on…

Spintronics is expected as the next-generation technology based on the novel notch of spin degree of freedom of electrons. Half metals, a class of materials which behave as a metal in one spin direction and an insulator in the opposite spin…

材料科学 · 物理学 2011-08-19 Xiao HU

We apply the finite-temperature variational cluster approach to a strongly correlated and spin-orbit coupled model for four electrons (i.e. two holes) in the $t_{2g}$ subshell. We focus on parameters suitable for antiferromagnetic Mott…

强关联电子 · 物理学 2021-07-21 Jan Lotze , Maria Daghofer

Half-metallic Heusler alloys are amongst the most promising materials for future magnetoelectronic applications. We review some recent results on the electronic properties of these compounds. The origin of the gap in these half-metallic…

材料科学 · 物理学 2009-11-11 I. Galanakis , Ph. Mavropoulos

We study a range of thermodynamic properties (charge susceptibility, specific heat, entropy and spin susceptibility) of the Hubbard model on the anisotropic triangular lattice at half filling by means of the numerical finite-temperature…

强关联电子 · 物理学 2013-05-30 J. Kokalj , Ross H. McKenzie

We study the transition from paramagnetic metal to paramagnetic insulator by finite temperature Quantum Monte-Carlo simulations for the 2D Hubbard model at half-filling. Working at the moderately high temperature T=0.33*t where the spin…

强关联电子 · 物理学 2007-05-23 C. Groeber , M. G. Zacher , R. Eder

A heterostructure of a semi-infinite metal and a Mott insulator is considered. It is supposed that both materials have an identical lattice spacing and hopping integrals and differ in the Hubbard repulsion which is negligible in the metal…

强关联电子 · 物理学 2015-05-13 A. Sherman , N. Voropajeva
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