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相关论文: Orbital-selective Peierls phase in the metallic di…

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The layered metal phosphorous trisulfide FePS$_3$ is reported to be a Mott insulator at ambient conditions and to undergo structural and insulator-metal phase transitions under pressure. However, the character of the resulting metallic…

强关联电子 · 物理学 2022-02-28 Minsung Kim , Heung-Sik Kim , Kristjan Haule , David Vanderbilt

We study the topological properties of Peierls transitions in a monovalent M\"{o}bius ladder. Along the transverse and longitudinal directions of the ladder, there exist plenty Peierls phases corresponding to various dimerization patterns.…

介观与纳米尺度物理 · 物理学 2009-11-20 Z. R. Gong , Z. Song , C. P. Sun

We present a detailed account of the physics of Vanadium sesquioxide (${\rm V_2O_3}$), a benchmark system for studying correlation induced metal-insulator transition(s). Based on a detailed perusal of a wide range of experimental data, we…

强关联电子 · 物理学 2009-11-11 M. S. Laad , L. Craco , E. Müller-Hartmann

We explore the magnetic properties of isolated a-b planes of trinuclear organometallic crystals, Mo3S7(dmit)3, in which an interplay of strong electronic correlations and spin molecular-orbital coupling (SMOC) occurs. The magnetic…

强关联电子 · 物理学 2018-11-01 J. Merino , A. C. Jacko , A. L. Khosla , A. Ralko , B. J. Powell

Spin- or orbital-selective behaviours in correlated electron materials offer rich promise for spintronics or orbitronics phenomena and applications deriving from them. Strong local electronic Coulomb correlations might lead to an…

强关联电子 · 物理学 2024-06-03 Evgeny A. Stepanov , Silke Biermann

We present first-principles studies on the orbital states of the layered perovskites Ca$_{2-x}$Sr$_x$RuO$_4$. The crossover from antiferromagnetic (AF) Mott insulator for $x < 0.2$ to nearly ferromagnetic (FM) metal at $x=0.5$ is…

强关联电子 · 物理学 2009-11-10 Zhong Fang , Naoto Nagaosa , Kiyoyuki Terakura

In the present study we employed density functional theory calculations to investigate the mechanical behavior, bonding nature and defect processes of the new ordered MAX phase Mo2ScAlC2. The mechanical stability of the compound is verified…

材料科学 · 物理学 2017-02-13 M. A. Hadi , S. H. Naqib , S. -R. G. Christopoulos , A. Chroneos , A. K. M. A. Islam

The higher-order topological insulator is an extended concept of the conventional topological insulator, which obeys the generalization of the standard bulk-boundary correspondence. In our paper, we predict the monolayer \textit{d1T}-phase…

材料科学 · 物理学 2026-05-19 Yingjie Hu , Heng Gao , Wei Ren

We study \textit{ab initio} a pyrochlore compound, CsW$_{2}$O$_{6}$, which exhibits a yet unexplained metal-insulator transition. We find that (1) the reported low-$T$ structure is likely inaccurate and the correct structure has a twice…

超导电性 · 物理学 2017-01-10 S. V. Streltsov , I. I. Mazin , R. Heid , K. -P. Bohnen

The nondegenerate two-orbital Hubbard model is studied within the dynamic mean-field theory to reveal the influence of two important factors, i.e. crystal field splitting and interorbital hopping, on orbital selective Mott transition (OSMT)…

强关联电子 · 物理学 2009-11-06 Yun Song , Liang-Jian Zou

We use exact diagonalization combined with mean-field theory to investigate the phase diagram of the spin-orbital model for cubic vanadates. The spin-orbit coupling competes with Hund's exchange and triggers a novel phase, with the ordering…

强关联电子 · 物理学 2016-08-31 Peter Horsch , Giniyat Khaliullin , Andrzej M. Oles

We use density functional theory to explore the possibility of making the semiconducting transition-metal dichalcogenide MoS$_2$ ferromagnetic by introducing holes into the narrow Mo $d$ band that forms the top of the valence band. In the…

材料科学 · 物理学 2019-12-25 Yuqiang Gao , Nirmal Ganguli , Paul J. Kelly

We study TiOCl as an example of an S=1/2 layered Mott insulator. From our analysis of new susceptibility data, combined with LDA and LDA+U band structure calculations, we conclude that orbital ordering produces quasi-one-dimensional spin…

强关联电子 · 物理学 2009-11-07 Alexander Seidel , Chris A. Marianetti , F. C. Chou , Gerbrand Ceder , Patrick A. Lee

In the Mott insulating phase of the transition metal oxides, the effective orbital-orbital interaction is directional both in the orbital space and in the real space. We discuss a classical realization of directional coupling in two…

强关联电子 · 物理学 2009-11-10 Anup Mishra , Michael Ma , Fu-Chun Zhang , Siegfried Guertler , Lei-Han Tang , Shaolong Wan

Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric…

We theoretically explore the effect of metal and disulphur vacancies on electronic and optical properties of MoS$_2$ and WS$_2$ monolayers based on a Slater-Koster tight-binding model and including the spin-orbit coupling. We show that the…

介观与纳米尺度物理 · 物理学 2018-05-25 Saboura Salehi , Alireza Saffarzadeh

Based on the analysis of a two-orbital Hubbard model within a mean-field approach, we propose a mechanism for an orbital selective phase transition (OSPT) where coexistence of localized and itinerant electrons can be realized. We show that…

强关联电子 · 物理学 2012-01-31 Yu-Zhong Zhang , Hunpyo Lee , Hai-Qing Lin , Chang-Qin Wu , Harald O. Jeschke , Roser Valenti

The influence of atomic vacancy defects at different concentrations on electronic properties of MoS$_2$ and WS$_2$ monolayers is studied by means of Slater-Koster tight-binding model with non-orthogonal $sp^3d^5$ orbitals and including the…

介观与纳米尺度物理 · 物理学 2016-05-30 Saboura Salehi , Alireza Saffarzadeh

The metal-insulator transition in VO2 was investigated using the three-band Hubbard model, in which the degeneracy of the 3d orbitals, the on-site Coulomb and exchange interactions, and the effects of lattice distortion were considered. A…

凝聚态物理 · 物理学 2009-11-10 Arata Tanaka

The spin-orbit coupling (SOC) lifts the band degeneracy that plays a vital role in the search for different topological states, such as topological insulators (TIs) and topological semimetals (TSMs). In TSMs, the SOC can partially gap a…