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We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron…

Chemically synthesized single-crystalline gold microplates have been attracting increasing interests because of their potential as high-quality gold films for nanotechnology. We present the growth of tens of nanometer thick and tens of…

材料科学 · 物理学 2016-12-28 Xiaofei Wu , René Kullock , Enno Krauss , Bert Hecht

Single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics. Here, we report the controlled vapor phase synthesis of molybdenum disulfide…

Monolayer Molybdenum disulfide (MoS2), a two-dimensional crystal with a direct bandgap, is a promising candidate for 2D nanoelectronic devices complementing graphene. There have been recent attempts to produce MoS2 layers via chemical and…

材料科学 · 物理学 2011-11-23 Yongjie Zhan , Zheng Liu , Sina Najmaei , Pulickel M. Ajayan , Jun Lou

We present a method for synthesizing large area epitaxial single-layer MoS$_2$ on the Au(111) surface in ultrahigh vacuum. Using scanning tunneling microscopy and low energy electron diffraction, the evolution of the growth is followed from…

Recently, monolayer SnS, a two-dimensional group IV monochalcogenide, was grown on a mica substrate at the micrometer-size scale by the simple physical vapor deposition (PVD), resulting in the successful demonstration of its in-plane room…

材料科学 · 物理学 2020-12-03 H. Kawamoto , N. Higashitarumizu , N. Nagamura , M. Nakamura , K. Shimamura , N. Ohashi , K. Nagashio

Through the positive role of alkali halides in realizing large area growth of transition metal-di-chalcogenide layers has been validated, the film-growth kinematics has not yet been fully established. This work presents a systematic…

Recent progress in large-area synthesis of monolayer molybdenum disulfide, a new two-dimensional direct-bandgap semiconductor, is paving the way for applications in atomically thin electronics. Little is known, however, about the…

Growth of epitaxial gold silicide islands on bromine-passivated Si(111) substrates has been studied by optical and electron microscopy, electron probe micro analysis and helium ion backscattering. The islands grow in the shape of…

凝聚态物理 · 物理学 2009-10-22 K. Sekar , G. Kuri , P. V. Satyam , B. Sundaravel , D. P. Mahapatra , B. N. Dev

Atomically thin transition metal dichalcogenides (TMDs) have recently attracted great attention since the unique and fascinating physical properties have been found in various TMDs, implying potential applications in next-generation…

Very large-scale integration of devices in a circular pattern has several advantages over the commonly used rectangular grid layout. For the development of such integrated circuits on a 2D semiconductor platform, spontaneous growth of the…

材料科学 · 物理学 2026-01-06 Umakanta Patra , Subhabrata Dhar

The growth of single-layer MoS2 with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual…

介观与纳米尺度物理 · 物理学 2017-04-07 Foad Ghasemi , Riccardo Frisenda , Dumitru Dumcenco , Andras Kis , David Perez de Lara , Andres Castellanos-Gomez

Developing novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS2) over an insulating…

In this work we investigate influence of substrate temperature on the surface morphology for substrate coverage below one monolayer. The model of film growth is based on random deposition enriched by limited surface diffusion. Also…

凝聚态物理 · 物理学 2007-05-23 K. Malarz

We show that atomically thin molybdenum disulfide (MoS2) crystals can grow without any underlying substrates into free-standing atomically-thin layers, maintaining their planar 2D form. Using this property, we present a new mechanism for 2D…

We use low-energy electron microscopy to investigate how graphene grows on Cu(111). Graphene islands first nucleate at substrate defects such as step bunches and impurities. A considerable fraction of these islands can be rotationally…

材料科学 · 物理学 2011-10-20 S. Nie , J. M. Wofford , N. C. Bartelt , O. D. Dubon , K. F. McCarty

To ensure the practical application of atomically thin transition metal dichalcogenides, it is essential to characterize their structural stability under external stimuli such as electric fields and currents. Using vacancy monolayer islands…

介观与纳米尺度物理 · 物理学 2018-04-04 Husong Zheng , Salvador Valtierra , Nana Ofori-Opoku , Chuanhui Chen , Lifei Sun , Liying Jiao , Kirk H. Bevan , Chenggang Tao

Real-time monitoring is essential for understanding and eventually precise controlling of the growth of two dimensional transition-metal dichalcogenides (2D TMDCs). However, it is very challenging to carry out such kind of studies on…

材料科学 · 物理学 2018-11-02 C. B. López-Posadas , Yaxu Wei , Wanfu Shen , Daniel Kahr , Michael Hohage , Lidong Sun

Monolayer molybdenum disulphide (MoS$_2$) is a promising two-dimensional (2D) material for nanoelectronic and optoelectronic applications. The large-area growth of MoS$_2$ has been demonstrated using chemical vapor deposition (CVD) in a…

The utilization of alkali salts, such as NaCl and KI, have enabled the successful growth of large single domain and fully coalesced polycrystalline two-dimensional (2D) transition metal dichalcogenide layers. However, the impact of alkali…

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