相关论文: A Compact Model for SiC Power MOSFETs for Large Cu…

We use Monte Carlo simulations to examine the simplest model of an ionic liquid, called the restricted primitive model, at a metal surface. We find that at moderately low temperatures the capacitance of the metal/ionic liquid interface is…

We present the very first demonstration of a maser utilizing silicon vacancies (VSi) within 4H silicon carbide (SiC). Leveraging an innovative feedback-loop technique, we elevate the resonator's quality factor, enabling maser operation even…

This communication deals with a theoretical study of the hot spot onset (HSO) in cellular bipolar power transistors. This well-known phenomenon consists of a current crowding within few cells occurring for high power conditions, which…

SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO$_2$ interface degrade the ideal behavior of…

The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from…

An emerging paradigm in modern electronics is that of CMOS + $\sf X$ requiring the integration of standard CMOS technology with novel materials and technologies denoted by $\sf X$. In this context, a crucial challenge is to develop accurate…

It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures (MOS). The peak in the electron mobility…

We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields…

Silicon-based waveguide plasmon detectors have a great research interest because of CMOS compatibility and integration capability with other plasmonic integrated circuits. In this paper, a balanced metal-semiconductor-metal (MSM) integrated…

This manuscript deals with the analysis and VLSI implementation of adaptive information processing derived from biological measurements. Specifically, models for short term plasticity, long term plasticity and metaplasticity are derived…

Co(x nm, x=10nm or 40nm)/Cu(5nm)/Co(2.5nm) layers were deposited between copper electrodes in SiO2 vias. Magnetic states, and the corresponding resistance states, of these devices were switched by electric currents perpendicular to the…

We discuss various ways to handle self-interaction corrections (SIC) to Density Functional Theory (DFT) calculations. To that end, we use a simple model of few particles in a finite number of states together with a simple zero-range…

Advantages of operating portions of a power system at frequencies different from the standard 50 or 60 Hz have been demonstrated in the low frequency AC (LFAC) and high voltage DC (HVDC) literature. Branches constrained by stability or…

This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes.…

Using the Monte Carlo method, we determine the free energy of the interface of the 3D Ising model in the scaling region. By integrating the interface energies over the inverse temperature $\beta$, we obtain estimates for the free energies…

The current-voltage $IV$ characteristics of $SIS$ junctions are calculated in the framework of a multiband model with an anisotropic effective order parameter of HTSC. The results of calculations show that the shape of $IV$ characteristic…

A method to incorporate polarization charges at heterojunctions in compact models for transistors is presented. By including the polarization sheet charge as a Dirac delta function, the Poisson equation is solved to yield a closed equation…

A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors. The validity and the limitations of the method are…

Using first principles, classical potentials, and elasticity theory, we investigated the structure of a semiconductor/semiconductor interface with a high lattice mismatch, SiC/Si(001). Among several tested possible configurations, a…

Due to the energy transition, today's electrical networks include synchronous machines and inverter-based resources interfacing renewable energies such as wind turbines, solar panels, and Battery Energy Storage Systems to the grid. In such…