相关论文: A Compact Model for SiC Power MOSFETs for Large Cu…
The results of the investigation of changes of parameters of dynamic bipolar charge-voltage and bipolar and unipolar dynamic current-voltage characteristics and transient currents connected with the pulse change of humidity for the samples…
Density Functional Theory (DFT) calculations of electrode material properties in high energy density storage devices like lithium batteries have been standard practice for decades. In contrast, DFT modelling of explicit interfaces in…
For an electron density near the H=0 insulator-to-conductor transition, the magnetoconductivity of the low-temperature conducting phase in high-mobility silicon MOSFETs is consistent with the form…
Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are grounded. The emitted photons are caused by defect-assisted…
To assess the viability of a shallow-depth neutrino detector, a Cosmic Muon Veto Detector (CMVD) is being constructed on top of the stack of Resistive Plate Chamber (RPC) detectors at TIFR, Mumbai. The CMVD employs extruded plastic…
A novel approach for modeling Dark Count Rate (DCR) drift in Single-Photon Avalanche Diodes (SPADs) is proposed based on Hot-Carrier Degradation (HCD) inducing silicon-hydrogen bond dissociation at the Si/SiO2 interface. The energy and the…
We determined the interface state density ($D_{\rm it}$) distributions in the vicinity of the conduction band edge in silicon carbide (SiC) metal-oxide-semiconductor (MOS) structures by reproducing the experimental current-voltage…
The structural features of the interface between the cystalline and amorphous phases of Si solid are studied in simulations based on a combination of empirical interatomic potentials and a nonorthogonal tight-binding model. The…
Induced thermal scattering power thresholds have been calculated as a function of size and laser pump frequency. The thermal coupling coefficients of morphology dependent resonances were estimated by asymptotic methods. The resulting power…
The dynamical characteristics of a single frequency low pressure capacitively coupled plasma (CCP) device under varying applied RF voltages and driving frequencies are studied using particle-in-cell/Monte Carlo collision simulations. An…
Emerging memristor-based array architectures have been effectively employed in non-volatile memories and neuromorphic computing systems due to their density, scalability and capability of storing information. Nonetheless, to demonstrate a…
A 0.93 gram $1{\times}1{\times}0.4$ cm$^3$ SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. The detector's response under a…
Atom specific valence electronic structures at interface are elucidated successfully using soft x-ray absorption and emission spectroscopy. In order to demonstrate the versatility of this method, we investigated SiO2/Si interface as a…
Small-signal synchronization instability (SSI) may be triggered when a grid-connected converter is operated in weak grids. This problem is highly related to the active and reactive power (referred to as complex power) generation or…
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and…
We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree…
In this paper a CMOS operational amplifier is presented which operates at 2V power supply and 1microA input bias current at 0.8 micron technology using non conventional mode of operation of MOS transistors and whose input is depended on…
A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…
We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on two-dimensional (2D) materials. The electrostatics along the electrolyte-gated 2D-semiconductor stack is treated by solving the Poisson…
Layered transition metal oxides (TMO) are widely used as cathode materials in Na/Li batteries. The open-circuit voltage (OCV), which determines the energy density (together with capacity), is among the key physical and chemical factors…