相关论文: A Compact Model for SiC Power MOSFETs for Large Cu…
The existed theories and methods for calculating interfacial thermal conductance of solid-solid interface lead to diverse values that deviate from experimental measurements. In this letter, We propose a model to estimate the ITC at high…
Density functional theory calculations have been performed to study the structures and energetics of coherent and semicoherent TiC/Fe interfaces. A systematic method for determining the interfacial energy for the semicoherent interface with…
Silicon is a promising anode material for next-generation lithium-ion batteries due to its exceptionally high specific capacity (3600 mAh g$^{-1}$), significantly exceeding that of conventional graphite. However, its practical application…
In this work, we propose an explicit analytical equation to show the variation of top gate threshold voltage with respect to the JFET bottom gate voltage for a Flexible Threshold Voltage Field Effect Transistor (Flexible-FET) by solving 2-D…
As implemented in the commercialized device modeling software, the four-state nonradiative multi-phonon model has attracted intensive attention in the past decade for describing the physics in negative bias temperature instability (NBTI)…
The concept of complex frequency has been recently introduced on the IEEE Transactions on Power Systems to study bus voltage variations in magnitude and frequency and their link with complex power injections of a power system. In this…
Radiation hardening of the MOSFET is of the highest priority for sustaining high-power systems in the space radiation environment. SiC-based power electronics are being looked at as a strong alternative for high power spaceborne power…
Silicon has long been synonymous with semiconductor technology. This unique role is due largely to the remarkable properties of the Si-SiO_2 interface, especially the (001)-oriented interface used in most devices. Although Si is crystalline…
We measure the mechanical thermal noise of soft silicon atomic force microscopy cantilevers. Using an interferometric setup, we have a resolution down to 1E-14 m/rtHz on a wide spectral range (3 Hz to 1E5 Hz). The low frequency behavior…
We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances. At high…
Silicon carbide (SiC) is an important semiconductor material for fabricating power electronic devices that exhibit higher switch frequency, lower energy loss and substantial reduction both in size and weight in comparison with its Si-based…
Metal-semiconductor contacts are a pillar of modern semiconductor technology. Historically, their microscopic understanding has been hampered by the inability of traditional analytical and numerical methods to fully capture the complex…
In this communication we report studies of d.c current-voltage (I-V) characteristics of ultra thin films of Bi, quench condensed on single crystal sapphire substrates at T = 15K. The hysteretic I-V characteristics are explained using a…
Nanopositioning techniques currently applied to characterize physical properties of materials interesting for applications at the microscopic scale rely on high-voltage electronic control circuits that should have the lowest possible noise…
AC power cycling tests allow the most realistic reliability assessment by applying close to real stress to the device or module under test to meet functional safety standards, which is highly critical for traction applications. This paper…
Li-CO$_2$ batteries are promising energy storage systems due to their high theoretical energy density and CO$_2$ fixation capability, relying on reversible Li$_2$CO$_3$/C formation during discharge/charge cycles. We present a multiscale…
The rapid development of modern energy applications drives an urgent need to enhance the dielectric strength of energy storage dielectrics for higher power density. Interface design is a promising strategy to regulate the crucial charge…
This paper provides a comparative analysis of impedance models for power electronic converters and systems for the purpose of stability investigations. Such models can be divided into either decoupled models or matrix models. A decoupled…
SiC is a robust semiconductor material considered ideal for high-power application due to its material stability and large bulk thermal conductivity defined by the very fast phonons. In this paper, however, we show that both…
A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. The ASIC features a matrix of hexagonal pixels with a 100 \mu m pitch, read by…