Atom specific valence electronic structures at interface are elucidated successfully using soft x-ray absorption and emission spectroscopy. In order to demonstrate the versatility of this method, we investigated SiO2/Si interface as a prototype and directly observed valence electronic states projected at the particular atoms of the SiO2/Si interface; local electronic structure strongly depends on the chemical states of each atom. In addition we compared the experimental results with first-principle calculations, which quantitatively revealed the interfacial properties in atomic-scale.
@article{arxiv.cond-mat/0506128,
title = {Direct Observation of Site-specific Valence Electronic Structure at Interface: SiO2/Si Interface},
author = {Y. Yamashita and S. Yamamoto and K. Mukai and J. Yoshinobu and Y. Harada and T. Tokushima and 2T. Takeuchi and 2 Y. Takata and S. Shin and K. Akagi and S. Tsuneyuki},
journal= {arXiv preprint arXiv:cond-mat/0506128},
year = {2009}
}