Silicon-Oxide Interfaces: Structure and Electronic Properties

Y. G. Fedorenko

Silicon-Oxide Interfaces: Structure and Electronic Properties

Materials Science 2017-09-07 v1

Authors: Y. G. Fedorenko

Abstract

The paper reviews methods used to study the electronic and structural properties of silicon/insulator interfaces. Methodological approaches to study the interface states and charge trapping in the oxide are considered. An overview of archetypical structural defects of the Si/SiO2 interface is given.

Keywords

oxide interfaces silicon physics

Cite

@article{arxiv.1709.01917,
  title  = {Silicon-Oxide Interfaces: Structure and Electronic Properties},
  author = {Y. G. Fedorenko},
  journal= {arXiv preprint arXiv:1709.01917},
  year   = {2017}
}

Comments

(in Russian)

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