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相关论文: Mott Memristors based on Field-Induced Carrier Ava…

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The high-temperature superconductivity in copper oxides emerges when carriers are doped into the parent Mott insulator. This well-established fact has, however, eluded a microscopic explanation. Here we show that the missing link is the…

强关联电子 · 物理学 2018-11-14 Shiro Sakai , Marcello Civelli , Masatoshi Imada

With the hierarchical Green's function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green's function and related multiple-point correlation…

强关联电子 · 物理学 2020-01-29 Yu-Liang Liu

We study the photoinduced ultrafast dynamics in relativistic Mott insulators, i.e., Mott insulators with strong spin-orbit coupling. For this purpose, we consider a minimal one-band Hubbard model on lattices with square and triangular…

强关联电子 · 物理学 2020-10-20 Jiajun Li , Nagamalleswararao Dasari , Martin Eckstein

Reversible bipolar nano-switches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular-dynamics simulations that mimic systems with oxygen vacancies…

介观与纳米尺度物理 · 物理学 2015-05-20 S. E. Savel'ev , A. S. Alexandrov , A. M. Bratkovsky , R. Stanley Williams

We report particle-hole pair excitations in a cuprate insulator in the intermediate regimes of momentum-transfers using high energy inelastic x-ray scattering. The excitation spectra show dispersive features near the Mott edge which shed…

强关联电子 · 物理学 2009-11-07 M. Z. Hasan , E. D. Isaacs , Z-X. Shen , L. L. Miller

We study real-time dynamics of a charge carrier introduced into undoped Mott insulator propagating under a constant electric field F on the t-J ladder and square lattice. We calculate quasistationary current. In both systems adiabatic…

强关联电子 · 物理学 2011-05-10 Marcin Mierzejewski , Lev Vidmar , Janez Bonca , Peter Prelovsek

We suggest electronic circuits with memristors (resistors with memory) that operate as memcapacitors (capacitors with memory) and meminductors (inductors with memory). Using a memristor emulator, the suggested circuits have been built and…

仪器与探测器 · 物理学 2014-11-20 Yuriy V. Pershin , Massimiliano Di Ventra

The coupling of internal electronic excitations to vibrational modes of the external motion of ultracold atoms in an optical lattice is studied here in using a perturbation expansion in small atomic displacements. In the Mott insulator case…

量子气体 · 物理学 2011-06-08 Hashem Zoubi , Helmut Ritsch

In correlated electrons system, quantum melting of electronic crystalline phase often gives rise to many novel electronic phases. In cuprates superconductors, melting the Mott insulating phase with carrier doping leads to a quantum version…

超导电性 · 物理学 2016-11-16 J. Li , D. Zhao , Y. P. Wu , S. J. Li , D. W. Song , L. X. Zheng , N. Z. Wang , X. G. Luo , Z. Sun , T. Wu , X. H. Chen

We investigate how fast and how effective photocarrier excitation can modify the exchange interaction $J_\mathrm{ex}$ in the prototype Mott-Hubbard insulator. We demonstrate an ultrafast quenching of $J_\mathrm{ex}$ both by evaluating…

强关联电子 · 物理学 2014-08-08 J. H. Mentink , M. Eckstein

We consider the Bose-Hubbard model on a two-leg ladder under an artificial magnetic field, and investigate the superfluid-to-Mott insulator transition in this setting. Recently, this system has been experimentally realized [M.Atala…

量子气体 · 物理学 2015-02-03 Ahmet Keleş , M. Ö. Oktel

Memristors have pinched hysteresis loops in the $V-I$ plane. Ideal memristors are everywhere non-linear, cross at zero and are rotationally symmetric. In this paper we extend memristor theory to produce different types of non-ideality and…

介观与纳米尺度物理 · 物理学 2016-11-17 Ella Gale

The topological classification of electronic band structures is based on symmetry properties of Bloch eigenstates of single-particle Hamiltonians. In parallel, topological field theory has opened the doors to the formulation and…

Charge order appears to be an ubiquitous phenomenon in doped Mott insulators, which is currently under intense experimental and theoretical investigations particularly in the high $T_c$ cuprates. This phenomenon is conventionally understood…

强关联电子 · 物理学 2015-07-09 Zheng Zhu , Chushun Tian , Hong-Chen Jiang , Yang Qi , Zheng-Yu Weng , Jan Zaanen

Motivated by recent experiments on spin pumping from a ferromagnet into organic materials in which the charge transport is due to hopping, we study theoretically the generation and propagation of spin current in a hopping insulator. Unlike…

介观与纳米尺度物理 · 物理学 2016-02-05 Z. Yue , D. A. Pesin , M. E. Raikh

We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS)…

介观与纳米尺度物理 · 物理学 2010-02-03 V. Moshnyaga , M. Esseling , L. Sudheendra , O. I. Lebedev , K. Gehrke , G. Van Tendeloo , K. Samwer

A possibility of a metal-insulator transition in molecular conductors has been studied for systems composed of donor molecules and fully ionized anions with an incommensurate ratio close to 2:1 based on a one-dimensional extended Hubbard…

强关联电子 · 物理学 2009-11-11 Hideo Yoshioka , Hitoshi Seo , Hidetoshi Fukuyama

Motivated by recent experiments of a novel 5$d$ Mott insulator in Sr$_2$IrO$_4$, we have studied the two-dimensional three-orbital Hubbard model with a spin-orbit coupling $\lambda$. The variational Monte Carlo method is used to obtain the…

强关联电子 · 物理学 2010-11-25 Hiroshi Watanabe , Tomonori Shirakawa , Seiji Yunoki

Many-body effects are at the very heart of diverse phenomena found in condensed-matter physics. One striking example is the Mott insulator phase where conductivity is suppressed as a result of a strong repulsive interaction. Advances in…

We study the breakdown of a Mott insulator with the thermodynamic imbalance induced by an applied bias voltage. By analyzing the instabilities of the magnetic susceptibility, we describe a rich non-equilibrium phase diagram, obtained for…

强关联电子 · 物理学 2016-05-04 Pedro Ribeiro , Andrey E. Antipov , Alexey N. Rubtsov
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