相关论文: Topological insulators based on HgTe
Surface states of topological insulators (TIs) have been playing the central role in the majority of outstanding investigations in low-dimensional electron systems for more than 10 years. TIs based on high-quality strained HgTe films…
Two-dimensional topological insulators (2DTI) have attracted increasing attention during the past few years. New 2DTI with increasing larger spin-orbit coupling (SOC) gaps have been predicted by theoretical calculations and some of them…
Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator, but have protected conducting states on their edge or surface. The 2D topological insulator is a quantum spin Hall insulator, which is a…
Using THz spectroscopy in external magnetic fields we investigate the low-temperature charge dynamics of strained HgTe, a three dimensional topological insulator. From the Faraday rotation angle and ellipticity a complete characterization…
Two-dimensional (2D) topological insulators (TIs) with a large bulk band-gap are promising for experimental studies of the quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in…
Three dimensional (3D) topological insulators (TIs) are an important class of materials with applications in electronics, spintronics and quantum computing. With the recent development of truly bulk insulating 3D TIs, it has become possible…
We investigated the magnetotransport properties of strained, 80nm thick HgTe layers featuring a high mobility of mu =4x10^5 cm^2/Vs. By means of a top gate the Fermi-energy is tuned from the valence band through the Dirac type surface…
The thermoelectric response of 80-nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the…
Topological insulators are predicted to present novel surface transport phenomena, but their experimental studies have been hindered by a metallic bulk conduction that overwhelms the surface transport. We show that a new topological…
Three-dimensional (3D) topological insulators (TIs) are new forms of quantum matter that are characterized by their insulating bulk state and exotic metallic surface state, which hosts helical Dirac fermions1-2. Very recently, BiTeCl, one…
In a topological insulator (TI) the character of electron transport varies from insulating in the interior of the material to metallic near its surface. Unlike, however, ordinary metals, conducting surface states in TIs are topologically…
Two-dimensional topological insulators (2D TIs) are a highly desired quantum phase but few materials have demonstrated clear signatures of a 2D TI state. It has been predicted that 2D TIs can be created from thin films of three-dimensional…
2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the…
Three-dimensional topological insulators represent a new class of materials in which transport is governed by Dirac surface states while the bulk remains insulating. Due to helical spin polarization of the surface states, the coupling of a…
Topological insulators represent a new quantum state of matter which is characterized by edge or surface states and an insulating band gap in the bulk. In a two dimensional (2D) system based on the HgTe quantum well (QW) of critical width…
Two-dimensional (2D) topological insulators (TIs) hold promise for applications in spintronics based on the fact that the propagation direction of edge electrons of a 2D TI is robustly linked to their spin origination. Here, with the use of…
Topological insulators are new class of materials which are characterized by a bulk band gap like ordinary band insulator but have protected conducting states on their edge or surface. These states emerge out due to the combination of…
Topological insulators (TIs) are a new quantum state of matter which have gapless surface states inside the bulk energy gap. Starting with the discovery of two dimensional TIs, the HgTe-based quantum wells, many new topological materials…
It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and…
Quantum wells formed by layers of HgTe between Hg$_{1-x}$Cd$_x$Te barriers lead to two-dimensional (2D) topological insulators, as predicted by the BHZ model. Here, we theoretically and experimentally investigate the characteristics of…